Bulletin of the American Physical Society
61st Annual Gaseous Electronics Conference
Volume 53, Number 10
Monday–Friday, October 13–17, 2008; Dallas, Texas
Session XF1: Material Processing II
1:30 PM–3:30 PM,
Friday, October 17, 2008
Room: Salon E
Chair: S.G. Walton, Naval Research Laboratory
Abstract ID: BAPS.2008.GEC.XF1.2
Abstract: XF1.00002 : Threshold energy for plasma etching of high-$k$ dielectric HfO$_{2}$ films in BCl$_{3}$-containing plasmas
1:45 PM–2:00 PM
Preview Abstract Abstract
Authors:
Yoshinori Ueda
(Kyoto University)
Keisuke Nakamura
(Kyoto University)
Hiroaki Kiyokami
(Kyoto University)
Hiroaki Ohta
(Kyoto University)
Koji Eriguchi
(Kyoto University)
Kouichi Ono
(Kyoto University)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2008.GEC.XF1.2
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