Bulletin of the American Physical Society
2008 Joint Fall Meeting of the Texas and Four Corners Sections of APS, AAPT, and Zones 13 and 16 of SPS, and the Societies of Hispanic & Black Physicists
Volume 53, Number 11
Friday–Saturday, October 17–18, 2008; El Paso, Texas
Session K1: Closing Plenary Session |
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Chair: Wim Geerts, Texas State University - San Marcos Room: Union East, 3rd Floor Tomas Rivera |
Saturday, October 18, 2008 3:15PM - 3:51PM |
K1.00001: The Einstein-Podolsky-Rosen \textit{Gedankenexperiment}, Bell Inequalities, and Experimental Realizations Invited Speaker: The famous Einstein-Podolsky-Rosen \textit{Gedankenexperiment} (EPR) and the subsequent analysis by John Bell some 30 years later provided the foundation for a burgeoning interest in phenomena based on quantum properties, most importantly the quantum aspect known as entanglement. These phenomena, still in their infancy, include quantum cryptography, quantum teleportation, quantum computing and quantum information processing. An historical background will be presented and Bohm's version of EPR will be discussed. A simple layman's level example of a Bell inequality will be derived. The initial experimental tests of a Bell Inequality during the second ``Magic Decade of Quantum Mechanics'' involved polarization correlations between two photons in an atomic cascade. Later experiments have used two photons from a down conversion process and have examined, for example, entanglement over large distances. An example of a true experimental realization of Bohm's classic version of EPR will be described. Specifically, the experimental realization involves measurement of angular momentum correlations between two spin one-half mercury atoms (nuclei). The latter are produced by resonant Raman dissociation of a mercury dimer that is in an electronic and nuclear spin singlet state. Determination of the spin one-half angular momentum components of the resulting two spatially separated $^{199}$Hg atoms is accomplished simultaneously with their detection via a polarization selective excitation and ionization scheme. [Preview Abstract] |
Saturday, October 18, 2008 3:51PM - 4:27PM |
K1.00002: Oxide-Semiconductor Heterostructures: Challenges and Opportunities Invited Speaker: Crystalline oxides form a broad class of materials with a wide range of properties including ferroelectric, ferromagnetic, piezoelectric, pyroelectric, electro-optic and superconducting. Such oxides on semiconductors are becoming important as an enabling technology for the integration of multifunctional oxide based electronics with mature existing semiconductor applications. Integration of such devices with standard Si-based electronics together with the need for a replacement gate dielectric for Si CMOS devices has been the thrust for the development of epitaxial oxides on semiconductors. Research into the growth of epitaxial perovskite oxides on silicon and compound semiconductor has led to the use of unique buffer layers and growth processes through molecular beam epitaxy that has yet to be replicated by any other growth technique. In addition, there has also been a tremendous increase in the research activities into using III-V compound semiconductors as alternative channels materials in future Si-CMOS devices. Although these are suitable candidates due to their high mobilities, they suffer from a lack of a suitable gate dielectric material and integration pathway on silicon. In this presentation, I will first outline the challenges in the deposition of epitaxial oxides on semiconductors and the steps necessary to control the growth kinetics and its effects on the oxide/semiconductor interfacial properties. As an extension of oxide applications, the development of an oxide based multilayer gate dielectric on GaAs that results in an unpinned Fermi level and has the required properties for the realization of GaAs-based MOSFET devices will be discussed. [Preview Abstract] |
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