Bulletin of the American Physical Society
2020 Fall Meeting of the APS Prairie Section
Volume 65, Number 22
Friday–Sunday, November 13–15, 2020; Virtual
Session B05: Parallel C |
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Chair: Rakshya Khatiwada, Illinois Institute of Technology |
Saturday, November 14, 2020 1:15PM - 1:30PM |
B05.00001: An optimal quantum sampling regression algorithm for variational eigensolving in the low qubit number regime Pedro Rivero, Ian C. Cloet, Zack Sullivan The VQE algorithm, with all its merits, has turned out to be quite expensive to run given the way we currently access quantum processors (i.e. over the cloud). In order to alleviate this issue, in this paper we introduce an alternative hybrid quantum-classical algorithm, and analyze some of its use cases based on time complexity in the low qubit number regime. In exchange for some extra classical resources, this novel strategy is proved to be optimal in terms of the number of samples it requires from the quantum processor. We develop a simple ---yet general--- analytical model to evaluate when this algorithm is more efficient than VQE, and, from the same theoretical considerations, establish a threshold above which quantum advantage can occur. Finally, we demonstrate the efficacy of our algorithm for a benchmark problem. [Preview Abstract] |
Saturday, November 14, 2020 1:30PM - 1:45PM |
B05.00002: Simulation of Error Correction for Quantum Circuits Using Qiskit Mazharul Islam Mondal, Kishor T Kapale Abstract: Quantum teleportation, an indispensable tool for quantum information processing, is affected by errors and decoherence, but can be made reliable via quantum error correction. We have designed a 3-qubits encoded circuit in qiskit and then check whether a bit-flip error occurs on one of the three qubits or no error occurs. After that, we correct for a $\sigma $x--error that happened earlier. Two ancilla are added in the circuit in order to check the parity between qubits. Therefore, ancilla are measured however the data qubits are not measured directly. This measurement detects where an error has taken place. Using this syndrome information, we corrected the error by including a classically controlled $\sigma $x gate in the circuit. The IBM based platform qiskit is used to design the circuit and for the simulation. [Preview Abstract] |
Saturday, November 14, 2020 1:45PM - 2:00PM |
B05.00003: Effects of alloy disorder on the non-Abelian fractional quantum Hall states Hongxi Li, Ethan Kleinbaum, Nianpei Deng, Geoff Gardner, Michael Manfra, Gabor Csathy The presence of disorder suppresses various ordered states. However, we still lack quantitative knowledge of the effects of disorder on various parameters. Here we examine the reduction of the energy gap of the $\nu=5/2$ and $\nu=7/2$ fractional quantum Hall states by alloy disorder introduced to GaAs/AlGaAs samples during the MBE growth process. We determined the energy gap and disorder broadening of the even denominator fractional quantum Hall states using the model proposed by Morf and d'Ambrumenil. This quantitative analysis gives nonphysical dependence of disorder broadening parameter on alloy disorder concentration. However, using a modified analysis relying on shared intrinsic gaps will yield linear relationship between these two parameters. Furthermore, this method also enables us to distinguish effects of the short-range alloy disorder and that of other long range scattering disorders. This work was supported by No. DE-SC0006671. [Preview Abstract] |
Saturday, November 14, 2020 2:00PM - 2:15PM |
B05.00004: Magnetotransport of a high mobility two-dimensional electron system exhibiting features beyond Anderson localization in the nu$=$1 integer quantum Hall state Sean Myers, Haoyun Hung, Loren Pfeiffer, Ken West, Gabor Csathy Through continual advancements in sample growth procedures, GaAs quantum wells host two-dimensional electron systems with extremely low disorder and remarkably high mobilities. In a sample belonging to the newest generation having record high mobilities, we observe a pattern of structures in the magnetotransport near the integer quantum Hall state at the filling factor nu $=$ 1, which reveals electron localization effects beyond Anderson localization. The range of filling factors displaying the complex structure of magnetotransport overlaps with that of prior microwave absorption features of the Wigner solid in the flanks of integer quantum Hall plateaus. Moreover, the transport signatures are also consistent with the formation of the Wigner solid. Our measurements show that, contrary to the widely held belief, the Wigner solid in the flanks of integer quantum Hall plateaus does have signatures in dc transport in the cleanest electron gases and indicate the possibility of enriched physics in the latest generation of high mobility samples. [Preview Abstract] |
Saturday, November 14, 2020 2:15PM - 2:30PM |
B05.00005: Fragile 3D Order in V$_{(1-x)}$Mo$_{x}$O$_{2}$ Matthew Krogstad, Matthew Davenport, Logan Whitt, Stephan Rosenkranz, Raymond Osborn, Jared Allred VO$_2$ displays a first-order metal-insulator phase transition near 340 K. Accompanying this electronic transition is a structural transition. The connection between these two transitions is unclear, with electronically-driven and structurally-driven models providing conflicting results. Electron doping via molybdenum substitution enhances metallicity and reduces the structural transition temperature; between 17% and 19% Mo, we find that the long-range structural transition is suppressed entirely while the electronic transitions remain similar. Diffuse x-ray scattering measurements were performed on a single crystal of the V$_0.81$Mo$_0.19$O$_2$. In the low-temperature insulating phase, sharp rods are observed, indicating two-dimensional ordering of atomic displacements. The slight oscillation of these rods about the [110] direction in reciprocal space can be explained by weak, inherently frustrated coupling between the ordered planes. Such fragile embedded order is predicted by an Ising-like ferrodistortive model proposed by Lovorn and Sarker. 3D-ΔPDF analysis of the diffuse scattering and structural simulations provide a clear picture of the locally ordered atomic displacements in this system. [Preview Abstract] |
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