Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session Y28: Spin Qubits and Spin-to-Optical Transduction |
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Sponsoring Units: DQI DMP Chair: Richard Silver, NIST Room: LACC 405 |
Friday, March 9, 2018 11:15AM - 11:27AM |
Y28.00001: Hybrid Integration of Solid-state Quantum Dots on a Silicon-on-Insulator Photonic Chip Shahriar Aghaeimeibodi, Je-Hyung Kim, Christopher Richardson, Richard Leavitt, Dirk Englund, Edo Waks Efficient coupling of single photon sources with integrated photonic devices is required for complex quantum photonic systems. Solid-state quantum dots generate on-demand bright single photons, while Silicon-on-Insulator (SOI) photonic circuits can manipulate photons efficiently in a compact foot print. Therefore, combining these two platforms can make complex integrated quantum photonic devices possible. We demonstrate hybrid integration of solid-state quantum dots to SOI photonic devices. We transfer InP nanobeams containing telecom-emitting InAs quantum dots on SOI photonic devices using our pick-and-place technique with nanoscale precision. We couple the telecom wavelength photons from the quantum dots to the silicon waveguide and perform Hanbury-Brown and Twiss measurements on a waveguide beamsplitter. This approach could facilitate integration of pre-characterized III-V quantum dots into large-scale photonic structures that enable complex devices composed of many emitters and photons. |
Friday, March 9, 2018 11:27AM - 11:39AM |
Y28.00002: Spin-flip Raman emission from a quantum dot molecule Bumsu Lee, Samuel Carter, Brennan Pursley, Joel Grim, Michael Yakes, Allan Bracker, Dan Gammon InAs quantum dots (QDs) combine bright, high-purity single photon emission with a ground state spin qubit, providing an excellent solid state system for quantum information technologies. A quantum dot molecule, which consists of two neighboring QDs separated by a narrow tunnel barrier, has additional advantages. When each QD is charged with a single electron, a spin singlet-triplet Λ system is formed that can have a longer spin dephasing time than a single spin. Furthermore, optically driving near one arm of the system results in spin-flip Raman emission. We demonstrate that through this process the frequency, bandwidth, and pulse shape of the single Raman photons is controlled. We also perform quantum correlation measurements, including the second order correlation function g(2)(t) and indistinguishability of these photons. The ability to control the photon wavepacket of Raman emission should enable tunable and indistinguishable solid state single photon sources as well as efficient photon transfer in a quantum network. |
Friday, March 9, 2018 11:39AM - 11:51AM |
Y28.00003: Fiber coupled single photon source based on site selective nanowire quantum dots Louis Gaudreau, Jason Phoenix, Dan Dalacu, Philippe Poole, Khaled Mnaymneh, Souffian Haffouz, Sergei Studenikin, Piotr Zawadzki, Jean Lapointe, robin williams, Andrew Sachrajda Single photon sources are required for secure quantum communication and linear optical quantum computation. We are working on deterministic sources based on InAsP nanowire quantum dots. This system has shown very high single photon purity, high fidelity entangled photon pair generation and collection efficiencies approaching 50%. Here we demonstrate a completely fiber coupled system (i.e. excitation and collection) to generate quantum light. A lensed fiber within a dilution refrigerator with an 8 T magnet is used to map out site selectively grown nanowires in reflection, and subsequently to excite and collect the quantum dot emission from a chosen nanowire. We will use this approach to quantify the quantum optical properties of these nanowire based sources, including multi-photon emission probabilities and the role of phonons in the indistinguishability of sequentially emitted photons. |
Friday, March 9, 2018 11:51AM - 12:03PM |
Y28.00004: On-Chip Rare-Earth Ion Architecture for Microwave to Optical Transduction John Bartholomew, Jake Rochman, Jonathan Kindem, Tian Zhong, Ioana Craiciu, Chuting Wang, Andrei Faraon Quantum interconnects that generate entanglement between disparate quantum systems present opportunities for powerful and highly scalable quantum technologies. Rare-earth ions (REIs) in transparent crystals are an appealing platform in which to engineer high performance quantum interconnects particularly because of their ability to coherently transduce between microwave and optical photons. We present an on-chip REI architecture that integrates planar microwave technology with photonic waveguides and cavities: a versatile module for integrated quantum devices. |
Friday, March 9, 2018 12:03PM - 12:15PM |
Y28.00005: Electron spin control of ion implanted Si:Bi Tomas Peach, Kevin Homewood, Manon Lourenco, Juerong Li, Steve Chick, Kristian Stockbridge, Ben Murdin, Steve Clowes Group V donors in silicon are extremely promising candidates for implementation as qubits for quantum technologies due to their long spin coherence lifetimes and existing compatibility within the electronics industry. Bismuth donors are specifically attractive as they exhibit a 20-dimensional nuclear spin Hilbert space and a ground state hyperfine splitting that is resolvable even in the absence of a magnetic field. Incorporation of bismuth on a device scale is now necessary, and low energy ion implantation is currently the only viable method to achieve this. Therefore in this study we explore the fabrication conditions which best produce unperturbed bismuth impurity qubits. Donor bound exciton spectroscopy is used to probe the bismuth zero field hyperfine splitting and determine the relationship between implant density, annealing recipe, and the quality of incorporation. We use high field Hall measurements to infer the nature of observed implant strain and how it can be combated with an appropriate annealing recipe. In the process, we show that optimizing fabrication specifications such as annealing will be crucial to producing quantum devices using bismuth implantation. |
Friday, March 9, 2018 12:15PM - 12:27PM |
Y28.00006: An electro-optic photon converter for quantum networks Jeremy Witmer, Timothy McKenna, Patricio Arrangoiz-Arriola, Joseph Valery, Christopher Sarabalis, Jeff Hill, Amir Safavi-Naeini Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical quality factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices. |
Friday, March 9, 2018 12:27PM - 12:39PM |
Y28.00007: Pure down-conversion photons through sub-coherence-length domain engineering Francesco Graffitti, Dmytro Kundys, Derryck Reid, Agata Branczyk, Alessandro Fedrizzi Photonic quantum technology relies on efficient sources of coherent single photons, the ideal carriers of quantum information. Heralded single photons from parametric down-conversion can approximate on-demand single photons to a desired degree, with high spectral purities achieved through group-velocity matching and tailored crystal nonlinearities. |
Friday, March 9, 2018 12:39PM - 12:51PM |
Y28.00008: Local filtering operations on a pair of entangled qubits implemented by a fiber-optic polarization dependent loss emulator Brian Kirby, Daniel Jones, Michael Brodsky The ability to distribute entanglement to remote locations is an essential feature of future quantum networks. The quality of entanglement could suffer during transmission due to interactions with the transmitting channels. One of the impairments inherent specifically to optical fiber routes is polarization dependent loss (PDL). For the first time we provide a comprehensive treatment of PDL as a local filtering operation. By utilizing the rotational form of the filtering operator we are able to obtain analytical expressions for the entanglement metrics of a pair of polarization-entangled qubits traversing channels with PDL of arbitrary magnitude and orientation. We then generalize our approach by considering the effect of PDL on partially entangled states such as Bell diagonal states and Werner states. We further find the conditions for which local filtering in one channel can compensate for the effect of PDL in the other channel. Finally, we use our quantum networking fiber-optic telecom testbed to verify some of our theoretical findings experimentally. We are able to degrade the entanglement by introducing controlled PDL element in one channel and to compensate its effect by a properly matched PDL element in the other channel. |
Friday, March 9, 2018 12:51PM - 1:03PM |
Y28.00009: High yield method for contacting subsurface delta-doped phosphorus devices Scott Schmucker, Pradeep Namboodiri, Binhui Hu, Ranjit Kashid, Xiqiao Wang, Jonathan Wyrick, Richard Silver, Michael Stewart Scanning tunneling microscopy enables the atom-scale fabrication of 2-D delta-doped structures in Si, with applications from high-performance computing to quantum information processing. However, device fabrication is extremely demanding with potential yield-limiting steps at each stage, and the efficient integration of these 2-D systems with 3-D contacts remains a challenge. Traditional device contact schemes involve back-filling etched vias with metal or leveraging the Kirkendall effect for Al spiking. Both result in irreproducibility associated with the erratic nature of Al spiking and the challenge of preserving clean interfaces during via etching and metallization. Here, we present a robust method for contacting delta-doped phosphorus devices that overcomes the shortcomings of the more common methods while also minimizing the thermal budget. We discuss this method in terms of yield and contact resistance, and as the latest addition to our complete process for fabricating, contacting, and testing STM patterned delta-doped devices. |
Friday, March 9, 2018 1:03PM - 1:15PM |
Y28.00010: STM written nano-device and 2DEG measurements using pre-implanted contacts Joshua Pomeroy, Aruna Ramanayaka, Ke Tang, Xiqiao Wang, Hyun-soo Kim, Joseph Hagmann, Roy Murray, Scott Schmucker, Curt Richter, Rick Silver, Michael Stewart, Neil Zimmerman A streamlined method is used to contact and measure either nano-devices written using STM hydrogen resist lithography dosed with phosphine or surface gated MOSFET (metal-oxide semiconductor field effect transistors) using heavily doped implant regions made before any device fabrication. This process inversion allows the elimination of electron beam lithography for contacting and allow a greater fraction of processing to occur at the wafer scale, as opposed to the chip scale. The process method and results from both STM written nano-devices and MOSFETs showing good contact integrity will be discussed. |
Friday, March 9, 2018 1:15PM - 1:27PM |
Y28.00011: Impact of Si:P Delta-layer Quality on the Electrical Transport of Si:P STM Patterned Devices Xiqiao Wang, Pradeep Namboodiri, Scott Schmucker, Ranjit Kashid, Joseph Hagmann, Jonathan Wyrick, Roy Murray, Neil Zimmerman, Michael Stewart, Curt Richter, Richard Silver Phosphorus delta-doped silicon (Si:P) monolayers are a novel nanoscale system which can be patterned with atom-scale precision and feature unprecedented high carrier densities. Enabled by advanced hydrogen lithography techniques and low-temperature encapsulation overgrowth, patterned Si:P monolayers have become a valuable testbed for prototype Si quantum computing devices and novel atomically engineered superlattices. In this presentation, we investigate the effect of and interplay between dopant confinement, epitaxial Si overgrowth quality, and efficiency of STM patterning. We study the impact of these properties on coherent transport in the Si:P 2-D system using weak localization. We use lithographically patterned delta layers and STM-patterned Si:P nanometer-scale devices, such as low dimensional, atomically abrupt wires and tunnel junctions, as sensitive probes to characterize the Si:P material system, noise, and transport properties. Specifically, we vary the dopant density and encapsulation conditions of the Si:P system and present a detailed analysis of their effect on low temperature, electrical transport properties at the atomic scale. |
Friday, March 9, 2018 1:27PM - 1:39PM |
Y28.00012: Multiscale Modeling of Dopant Arrays in Silicon Andrew Baczewski, Ezra Bussmann, John Gamble, N. Tobias Jacobson, Justin Koepke, Richard Muller, Peter Schultz, Luke Shulenburger, Robert Simonson, Lisa Tracy, Daniel Ward, Shashank Misra Arrays of dopant atoms in a silicon host may have applications ranging from quantum information processing devices to designer platforms for quantum materials research. In this talk, we will describe a holistic modeling effort to promote the maturation of atomic-precision STM lithography for designer quantum materials applications. First, ab initio methods are used to guide the development of an experimentally-constrained kinetic model for the incorporation of phosphorus in silicon, providing a description of donor arrays with realistic disorder and yield. The electronic structure of these arrays are then described using a multi-scale approach utilizing density functional theory, multi-valley effective mass theory, and Hubbard-like lattice models. Results will be presented anticipating the outcomes of near-term transport experiments on small donor arrays positioned between mesoscopic conducting leads. |
Friday, March 9, 2018 1:39PM - 1:51PM |
Y28.00013: Si quantum dots with focused ion beam implanted phosphorus donors Tzu-Ming Lu, Will Hardy, Edward Bielejec, Daniel Perry, Daniel Ward, Joel Wendt, John Anderson, Tammy Pluym, Dwight Luhman, Malcolm Carroll, Michael Lilly Integrating MOS quantum dots with an on-chip ion detector allows for accurate counting of the number of ions implanted into a nanostructure. We present our recent progress in integrating deterministic single ion implantation with Si MOS quantum dot qubits. A MOS quantum dot system is first fabricated with standard e-beam lithography and etching of poly-silicon. Phosphorus ions are implanted into the target zones using a focused ion beam with a beam size of 40 nm at 45 keV in Sandia’s nano-implanter. Two well behaved lithographic MOS quantum dots are formed by electrostatic gating. One quantum dot is used as a charge sensor, while the other can be tuned from the many-electron to the few-electron regime. Donor-like objects that are coupled to the quantum dot are identified and characterized by capacitances measurements. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences, user facility. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA-0003525. |
Friday, March 9, 2018 1:51PM - 2:03PM |
Y28.00014: Quantum gates in donor based silicon qubits Fernando Calderon-Vargas, Edwin Barnes, Sophia Economou Recently, new types of qubits based on donors in silicon have been proposed, e.g. the flip-flop qubit and the electrically controlled nuclear spin qubit. These proposals provide potential advantages in terms of the speed and range of certain interactions, leading to promising quantum gate quality. Nevertheless, the qubit states are two levels out of a larger Hilbert space, and thus coherent errors and leakage can occur during control. Here we derive effective Hamiltonians for these qubits and present strategies for fast, high-fidelity quantum gates. |
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