Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session K32: Phosphorus Devices and Device PhysicsFocus
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Sponsoring Units: DMP Chair: Yu Ye, Peiking University Room: 295 |
Wednesday, March 15, 2017 8:00AM - 8:36AM |
K32.00001: Electronic properties of two-dimensional materials beyond graphene Invited Speaker: Yuanbo Zhang Two-dimensional (2D) atomic crystals, best exemplified by graphene, have emerged as a new class of material that may impact future science and technology. The reduced dimensionality in these 2D crystals often leads to novel material properties that are vastly different from that in the bulk. In this talk I will illustrate this scheme with two 2D materials that we found particularly interesting -- black phosphorus and 1T-TaS$_{\mathrm{2}}$. These two layered materials have vastly different properties. Black phosphorus is a 2D semiconductor, and its superior material quality has recently enabled us to observe the quantum Hall effect. 1T-TaS$_{\mathrm{2}}$, on the other hand, is a metal with a rich set of charge density wave phases. We explore their electronic properties while the doping and dimensionality of the 2D systems are modulated. [Preview Abstract] |
Wednesday, March 15, 2017 8:36AM - 8:48AM |
K32.00002: Electronic transport properties of suspended few-nm black phosphorus nanoribbons Paul Masih Das, Gopinath Danda, Andrew Cupo, Priyanka Jothi Thiruraman, Vincent Meunier, Marija Drndic Theoretical studies of few-nm wide black phosphorus nanoribbons have revealed highly tunable, width-dependent properties such as modulation of bandgap magnitude and carrier mobility. Due to the atmospheric instability of black phosphorus in the few-layer regime and a lack of suitable lithographic patterning techniques, these structures have yet to be reported. Here, we demonstrate the fabrication of few-nm wide and thick black phosphorus nanoribbons via in situ electron beam nanosculpting. We also present in situ orientation- and width-dependent two-terminal electronic transport measurements of these structures. These measurements yield valuable insight into the semiconducting properties of black phosphorus and its associated lower-dimensional nanostructures. [Preview Abstract] |
Wednesday, March 15, 2017 8:48AM - 9:00AM |
K32.00003: Anomalous Temperature dependent band gap in Black Phosphorus Alexandre Reily Rocha, Cesar Perez Villegas, Andrea Marini Black phosphorus has a number of electronic and optical properties, which are associated with it anisotropic structure. In terms of thermal properties, one poorly understood phenomena is black phosphorus' band gap temperature dependence. It presents a behaviour, which is opposite to most semiconductors, when temperature is increased, the fundamental band gap increases instead of decreases. In this work, based on ab initio density functional perturbation theory calculations, we present an explanation for this long known and yet not fully explained effect. We show that it arises from a combination of harmonic and lattice thermal expansion contributions. We narrow down the origin of this this effect to specific vibrational modes that present anharmonic contributions [1]. [1] C. P. Villegas, A. R. Rocha, A. Marini, Nano Lett., 16, 5095 (2016). [Preview Abstract] |
Wednesday, March 15, 2017 9:00AM - 9:12AM |
K32.00004: Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap Bingchen Deng, Vy Tran, Hao Jiang, Cheng Li, Yujun Xie, Qiushi Guo, Xiaomu Wang, He Tian, Han Wang, Judy Cha, Qiangfei Xia, Li Yang, Fengnian Xia Recently rediscovered black phosphorus is a promising layered material for electronics and photonics. Dynamic control of its bandgap is desirable to extend the black phosphorus device functionalities. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus thin films under an external electric field. We demonstrate that for optimum black phosphorus thickness, the bandgap can be continuously tuned from about 300 to below 50 meV using a moderate electric field readily achieved by regular dielectrics. Such dynamic tuning of bandgap can enable novel device applications and allow for the exploration of new physical phenomena. [Preview Abstract] |
Wednesday, March 15, 2017 9:12AM - 9:24AM |
K32.00005: Black phosphorous photodetectors for detecting light scattering properties in silicon waveguides Tianjiao Wang, Shuren Hu, Bhim Chamlagain, Tu Hong, Zhixian Zhou, Sharon Weiss, Yaqiong Xu By integrating a black phosphorus (BP) photodetector on top of a patterned silicon nanobeam waveguide, we investigate the light scattering properties of the waveguide through wavelength- and polarization-dependent scanning photocurrent measurements. The photocurrent distribution detected in the waveguide area exhibits similar pattern as the light intensity distribution calculated by the finite-difference time-domain simulation, indicating that the light scattering properties of the waveguide can be detected as photocurrent signals by the BP photodetector. Interestingly, we found that no photocurrent signals are observed when the incident photon energy goes below the bandgap of silicon, suggesting that the photo-excited electron-hole pairs in the silicon waveguide can be injected into the BP and then contribute to the photocurrent generation. From those results, we found that by utilizing photocurrent mapping, two-dimensional (2D) material based photodetectors can be an effective probe to learn the light-matter interactions of photonic structures. Those studies not only open avenues for understanding light manipulation properties of photonic structures but also provide further capacity for engineering high performance optoelectronics. [Preview Abstract] |
Wednesday, March 15, 2017 9:24AM - 9:36AM |
K32.00006: Abstract Withdrawn
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Wednesday, March 15, 2017 9:36AM - 9:48AM |
K32.00007: Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices Lihong Bao, Guocai Wang, Shixuan Du, Sokrates Pantelides, Hong-Jun Gao As a young member in the family of two dimensional materials, black phosphorus (BP) has attracted great attention since its discovery due to its high hole mobility and a sizable and tunable bandgap, which meets the basic requirements for logic circuits applications. Naturally, for realization of complementary logic operation, the challenge lies in how to control the conduction type in BP FETs, i.e., the dominant carrier types, holes (p-type) or electrons (n-type). However, the absence of reliable substitutional doping techniques makes this task a great challenge. \textbf{Introducing interfacial charges} into 2D materials has been proven to be a \textbf{successful }way to control conduction. In this work, we, \textbf{for} \textbf{the first time, demonstrate that capping a thin BP layer with a layer of} \textbf{cross-linked PMMA} \textbf{can modify the conductivity type of the BP by a surface charge transfer process, converting a BP layer dominated by hole conduction in the absence of an external electric field (p-type) to one dominated by electron conduction (n-type)}. Combining BP films capped by cross-linked PMMA with standard BP, a \textbf{family }of \textbf{planar devices} can be created, including BP \textbf{gated diodes and bidirectional recitifiers} (rectification ratio \textgreater 10$^{\mathrm{2)}}$ and BP l\textbf{ogic inverter} (gain¡«0.75) which are capable of performing current rectification, switching, and signal inversion operations. The device performance demonstrated here suggests a promising route for developing 2D-based electronics. [Preview Abstract] |
Wednesday, March 15, 2017 9:48AM - 10:00AM |
K32.00008: Direct observation of the layer-dependent electronic structure in phosphorene Likai Li, Jonghwan Kim, Chenhao Jin, Guo Jun Ye, Diana Y. Qiu, Felipe H. da Jornada, Zhiwen Shi, Long Chen, Zuocheng Zhang, Fangyuan Yang, Kenji Watanabe, Takashi Taniguchi, Wencai Ren, Steven G. Louie, Xian Hui Chen, Yuanbo Zhang, Feng Wang Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technology. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectrum range from visible to mid-infrared. In addition, few-layer phosphorene is observed to photoluminesce at energies that correlate well with the layer-dependent bandgap transitions. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other two-dimensional materials in electronic and opto-electronic applications. [Preview Abstract] |
Wednesday, March 15, 2017 10:00AM - 10:12AM |
K32.00009: Giant Raman Intensity Modulation and Etching Dynamics of Exfoliated Black Phosphorus Fadhel Alsaffar, Sarah Alodan, Abdullah Alrasheed, Abdulrahman Alhussain, Noura Alrubaiq, Ahmad Abbas, Moh. R. Amer Newly discovered 2D materials have demonstrated exceptional optical, mechanical, and electrical properties. Layered black phosphorus, recently discovered in the past few years, exhibit a tunable band gap, high electron mobility, and highly anisotropic, making it an attractive candidate for various electronic applications. However, black phosphorus is unstable in ambient environment, due to high reactivity with oxygen and water. Here, we spatially Raman map black phosphorus multilayers using fast-scanning Raman spectroscopy in order to capture the full picture of black phosphorus degradation mechanism. We find a giant intensity modulation in all black phosphorus vibrational modes as a function of degradation time. This Raman intensity modulation is found to be caused by optical interference due to multiple Raman scattering events inside black phosphorus layers, along with multiple reflections of the incident laser beam. Our results show that black phosphorus exhibit two different degradation mechanism, edge degradation and surface degradation. For thin film flakes, edge degradation dominates the degradation process, evident by a significant Raman intensity change at the edge of the flakes. However, for few layers flakes, surface degradation dominates the degradation process. Finally, we show that for the first time this giant Raman intensity modulation is caused by non-uniform etching of layers in ambient environment. We also estimate the etching rate at different sites on the surface of the flake which can give us insights into the degradation mechanism of black phosphorus. [Preview Abstract] |
Wednesday, March 15, 2017 10:12AM - 10:24AM |
K32.00010: Phosphorene --- Metal Contacts Yuanyuan Pan, Yangyang Wang, Meng Ye, Ruge Quhe, Hongxia Zhong, Zhigang Song, Xiyou Peng, Dapeng Yu, Jinbo Yang, Li Yang, Jing Lu Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes, in which direct contacting with metal electrodes leads to appearance of Schottky barrier at the phosphorene-metal interfaces. In this talk, we will present our new results about the contact properties and Schottky barrier height (SBH) of phosphorene with a series of commonly used metals (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) in transistors by using both ab initio electronic structure calculations and more reliable quantum transport simulations. Phosphorene undergoes a metallization under the checked metals, and the metallized phosphorene have an unnegligible coupling with channel phosphorene. The calculated SBHs are in good agreement with the available experimental data with Ni and Ti as electrodes. Our findings not only provide an insight into the phosphorene-metal interfaces but also help in phosphorene based device design. [Preview Abstract] |
Wednesday, March 15, 2017 10:24AM - 10:36AM |
K32.00011: Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus William Whitney, Michelle Sherrott, Deep Jariwala, Wei-Hsiang Lin, Hans Bechtel, George Rossman, Harry Atwater Black phosphorus has attracted considerable interest as a layered, two-dimensional semiconductor with high mobility, a narrow, direct band gap, and heavily anisotropic electronic properties. Thin flakes form natural quantum wells, and theory predicts black phosphorus to show technologically promising electro-optical effects and an oscillatory optical conductivity due to its quantized intersubband transitions. However, much of this novel behavior remains to be experimentally observed - in part due to the difficulty of infrared measurements on small, micron-scale exfoliated samples. We report here the first investigation of the infrared response of black phosphorus in which the Fermi level is varied by electrostatic gating, enabled by use of the high-brightness infrared beam at the Advanced Light Source synchrotron. These measurements reveal new physics, including strong optoelectronic modulation driven by ambipolar Burstein-Moss and quantum-confined Franz-Keldysh effects under high fields. The oscillatory optical conductivity is modified by Pauli-blocking of interband transitions as the Fermi level shifts, and additional modulation is seen that we attribute to modification of selection rules and carrier wavefunctions by the predicted Franz-Keldysh behavior. [Preview Abstract] |
Wednesday, March 15, 2017 10:36AM - 10:48AM |
K32.00012: Atomistic modeling of the sodium diffusion in black phosphorus anode. saeid Arabnejad Khanooki, Shunsuke KURAHASHI, Koichi Yamashita The increasing demand for rechargeable batteries and limitations in lithium resources has encouraged material scientists to search for alternative materials and systems for the next generation of batteries. Phosphorus-sodium systems with high theoretical capacity of 2596 mAhg$^{-1}$ seems to be one of the best feasible choices. Although the structure and properties of pure Phosphorus and fully Sodiated phosphorus (Na3P) are well known, the characteristics of intermediate phases are not well stablished. In this study we try to identify these phases and characterize their properties using two sub-atomic computational schemes. Density functional theory (DFT) and density functional tight binding (DFTB) are employed in this study. DFT has been incorporated to measure the chemical shift of different suggested phases and results have been compared with the available NMR results. It also has been observed that some of these phases are not stable when subjected to relatively small mechanical deformation. For a more realistic simulation of diffusion process, larger atomic models are preferred and therefore, DFTB has been employed for this part of the study. The DFTB parameters are initially modified based on the DFT results and then applied for the diffusion simulation. [Preview Abstract] |
Wednesday, March 15, 2017 10:48AM - 11:00AM |
K32.00013: Towards tunable black phosphorus field-effect transistors Zuocheng Zhang, Likai Li, Jason Horng, Naizhou Wang, Fangyuan Yang, Yu Zhang, Yijun Yu, Guorui Chen, Kenji Watanabe, Takashi Taniguchi, Xianhui Chen, Feng Wang, Yuanbo Zhang Black phosphorus stands out as a promising two-dimensional material for potential nano-electronic and opto-electronic applications. In this talk we present the fabrication of black phosphorus field-effect transistors on various substrates. The devices are fabricated using the dry-transfer method with polypropylene carbide (PPC) thin films in an inert atmosphere. Tunable ambipolar behavior is observed by varying the substrate. The excellent transistor performance may lead to novel device applications based on black phosphorus thin crystals. [Preview Abstract] |
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