Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session F43: Multiferroic Oxide HeterostructuresFocus
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Sponsoring Units: GMAG DMP DCOMP Chair: T. Zac Ward, Oak Ridge National Laboratory Room: 390 |
Tuesday, March 14, 2017 11:15AM - 11:51AM |
F43.00001: Ferroelectric control of magnetism in oxide heterostructures Invited Speaker: Shuai Dong Although magnetoelectricity can exist in bulks, e.g. in single phase multiferroics, the magnetoelectric functions, especially the electrical ($E$) control of magnetism, usually require heterostructures [1,2]. Despite various types of magnetoelectric coupling revealed in the past decade, the most practical magnetoelectric coupling seems to be the carrier driven one, which occurs at the ferroelectric-magnet interfaces or multiferroic domain walls [3]. In ferroelectric-manganite heterostructures, the magnetization and transport of manganite layer can be tuned by flipping the ferroelectric polarization. In this talk, I will introduce our theoretical designs to enhance this magnetoelectric effect, namely to control magnetization ($M$) using electric field more efficiently. First, the magnitude of magnetization can be fully switched on/off in the manganite bilayer [4]. Second, the inversion of magnetization can also be obtained in the [111]-oriented BiFeO$_3$ few layers [5], leading to the $E$-$M$ hysteresis loops. References: [1]. S. Dong, J.-M. Liu, S.-W. Cheong, Z.F. Ren. Adv. Phys. 64, 519 (2015). [2] X. Huang, S. Dong. Mod. Phys. Lett. B 28, 1430010 (2014). [3] S. Dong, X.T. Zhang, R. Yu, J.-M. Liu, E. Dagotto. Phys. Rev. B 84, 155117 (2011). [4] S. Dong, E. Dagotto. Phys. Rev. B 88, 140404(R) (2013). [5] Y.K. Weng, L.F. Lin, E. Dagotto, S. Dong. Phys. Rev. Lett. 117, 037601 (2016). [Preview Abstract] |
Tuesday, March 14, 2017 11:51AM - 12:03PM |
F43.00002: Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics Hanghui Chen, Andrew Millis Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO$_3$ and BiFeO$_3$ exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics--double perovskite oxides $A_2$VFeO$_6$ ($A$=Ba, Pb, etc). While neither perovskite $A$VO$_3$ nor $A$FeO$_3$ is ferroelectric, in the double perovskite $A_2$VFeO$_6$ a `complete' charge transfer from V to Fe leads to a non-bulk-like charge configuration--an empty V-$d$ shell and a half-filled Fe-$d$ shell, giving rise to a polarization comparable to that of important ferroelectrics $A$TiO$_3$. Different from nonmagnetic $A$TiO$_3$, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V $d^0$ state significantly reduces the band gap of $A_2$VFeO$_6$, making it smaller than that of $A$TiO$_3$ and BiFeO$_3$, which renders the new multiferroics a promising candidate to induce bulk photovoltaic effects. [Preview Abstract] |
Tuesday, March 14, 2017 12:03PM - 12:15PM |
F43.00003: Magnetoelectricity at The Antiperovskite/Perovskite Interface Ding-Fu Shao, Tula Paudel, Evgeny Tsymbal Complex perovskite oxide materials (ABO$_3$) are known for their interesting macroscopic physical properties. Much less explored are the antiperovskite compounds (AXM$_3$) where the atomic positions of cations and anions are inverted creating unique, wide-ranging properties different from perovskites. Due to the structural similarity, interfaces combining perovskite and antiperovskite compounds can be fabricated to create unexplored fundamental opportunities for materials design. Here, based on first-principles density-functional calculations, we explore the magnetoelectric effect at the (001) interface between antiperovskite GaNMn$_3$ and perovskite ATiO$_3$ (A=Sr, Ba). Unlike the $\Gamma^{5g}$ non-collinear magnetism of the bulk GaNMn$_3$, strong magnetic moment variation and reorientation emerge at the interface of GaNMn$_3$/ATiO$_3$ (A=Sr,Ba), resulting in the sizable net magnetization pointing along the [110] direction. Moreover, the switching of the ferroelectric polarization of BaTiO$_3$ drives the reversal of the net magnetization of GaNMn$_3$. The present phenomenon occurs due to the effect of ferroelectric polarization on the interfacial antiferromagnetic coupling, which paves a new route to achieve voltage-controlled spintronics. [Preview Abstract] |
Tuesday, March 14, 2017 12:15PM - 12:27PM |
F43.00004: Magnetic properties of hexagonal YbFeO$_{\mathrm{3}}$ thin film Kishan Sinha, Xin Zhang, Xiao Wang, Yaohua Liu, Xuemei Cheng, Alpha N'Diaye, Peter Dowben, Xiaoshan Xu We have synthesized epitaxial single crystal thin films of multiferroic hexagonal YbFeO3 (0001) on YSZ (111) substrates using Pulsed Laser Deposition. In-plane XRD and RHEED study confirms the existence of six-fold symmetry in YbFeO$_{\mathrm{3}}$ thin films, consistent with the proposed hexagonal structure. The epitaxial orientation is found to be $h$-YbFeO$_{\mathrm{3\thinspace }}$(100)\textbar \textbar YSZ(11-2). We have studied magnetic properties of $h$-YbFeO$_{\mathrm{3}}$/YSZ thin films using SQUID, neutron diffraction and X-ray Circular Magnetic Dichroism (XMCD). SQUID study of $h$-YbFeO$_{\mathrm{3}}$/YSZ thin films show emergence of out-of-plane magnetic moment at \textasciitilde 140 K, possibly due to spin canting resulting from Dzyaloshinskii-Moriya interaction. This ferromagnetic transition is consistent with our temperature dependent neutron diffraction study where appearance of the forbidden (purely magnetic) (101) peak marks a magnetic transition around \textasciitilde 150 K while the intensity of the nuclear (144) peak remains unaltered. In addition, SQUID and XMCD studies at low temperatures clearly indicate that \textit{Yb}$^{3+}$ ions carry a much lower magnetic moment than the previously reported values. [Preview Abstract] |
Tuesday, March 14, 2017 12:27PM - 12:39PM |
F43.00005: Effects of biaxial strain on the improper multiferroicity in h-LuFeO3 films Xiaoshan Xu, Kishan Sinha, Yubo Zhang, Xuanyuan Jiang, Xiao Wang, Xiaozhe Zhang, Philip Ryan, Jong-Woo Kim, John Bowlan, Dmitry Yarotski, Yuelin Li, Anthony DiChiara, Xuemei Cheng, Xifan Wu Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which have however been elusive due to the experimental difficulties. Employing the method of restrained thermal expansion, we have studied the effect of isothermal biaxial strain in the basal plane of h-LuFeO3 (001) films. The results indicate that a compressive biaxial strain significantly enhances the ferrodistortion, and the effect is larger at higher temperatures. The compressive biaxial strain and the enhanced ferrodistortion together, cause an increase in the electric polarization and a reduction in the canting of the weak ferromagnetic moments in h-LuFeO3, according to our first principle calculations. These findings are important for understanding the strain effect as well as the coupling between the lattice and the improper multiferroicity in h-LuFeO3. [Preview Abstract] |
Tuesday, March 14, 2017 12:39PM - 12:51PM |
F43.00006: Effects of Electric Field on the magnetic structure of multiferroic (Sm,Bi)FeO3 films William Ratcliff, Colin Heikes, Xiaohang Zhang, Ichiro Takeuchi BiFeO3 is a multiferroic, which is ordered at room temperature. In this compound, the magnetic and ferroelectric domains are coupled and magnetic domains can be switched with an electric field [1]. It has recently been found that doping Sm onto the Bi site drives the system from rhombohedral to orthorhombic ordering [2]. Near the phase boundary, application of an electric field can drive the material between the two structures. We found that the magnetic structure [4] is different across the boundary. In this talk, I share recent neutron diffraction results on the magnetic structure of (Sm,Bi)FeO3 thin films under electric field. [1] T. Zhao, A. Scholl, F. Zavaliche, K. Lee, M. Barry, A. Doran, M. P. Cruz, Y. H. Chu, C. Ederer, N. A. Spaldin, R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom, and R. Ramesh, Nature Materials \textbf{5}, 823 (2006). [2] Daisuke Kan, Ching-Jung Cheng, Valanoor Nagarajan, Ichiro Takeuchi \textbf{110}, 014106 (2011) [3] Daisuke Kan, Lucia Palova, Varatharajan Anbusathaiah, Ching Jung Cheng, Shigehiro Fujino, Valanoor Nagarajan, Karin M. Rabe, Ichiro Takeuchi, Adv. Funct. Mater. \textbf{20}, 1108 (2010). [4] Shingo Maruyama, Varatharajan Anbusathaiah, Amy Fennell, Mechthild Enderle, Ichiro Takeuchi, William D. Ratcliff, APL Mater. \textbf{2}, 116106 (2014). [Preview Abstract] |
Tuesday, March 14, 2017 12:51PM - 1:03PM |
F43.00007: Neutron diffraction and reflectometry measurements of the magnetic structure of BiFeO$_3$/La$_x$Bi$_{1-x}$FeO$_3$ superlattices Colin Heikes, Julia Mundy, Zhe Wang, R. Ramesh, Darrell Schlom, William Ratcliff We report the growth of BiFeO$_3$/La$_x$Bi$_{1-x}$FeO$_3$ superlattices as well as the results of neutron diffraction and reflectometry measurements of the magnetic structure of these films. We have synthesized these superlattice films using reactive oxygen molecular beam epitaxy (MBE) with a variety of La-doping concentrations in the La-doped BiFeO3 layers. We have made a range of films of the structure y*[ n*BiFeO$_3$/m*La$_x$Bi$_{1-x}$FeO$_3$]/substrate where n is the number of unit cells of BiFeO3, m is the number of unit cells of La$_x$Bi$_{1-x}$FeO$_3$, x is the La doping concentration, y is the number of superlattice repeats, and our substrate is either Nb:SrTiO$_3$ (100), SrTiO$_3$(100), or TbScO$_3$(110). X-ray diffraction and TEM measurements illustrate the high crystal quality of these films with this growth technique. We have performed both diffraction and reflectometry measurements at the NCNR at NIST. Our neutron diffraction measurements show an unusual magnetic field dependence of the magnetic structure for certain combinations of n, m, x, y, and substrate choice. [Preview Abstract] |
Tuesday, March 14, 2017 1:03PM - 1:15PM |
F43.00008: Electronic Excitations and Optical Properties of RFeO$_{\mathrm{3}}$ (R $=$ Lu and Yb) Thin Films Ram Rai, Devlin Mckenna, Caitlin Horvatits, Julianna Du Hart We present structural, electronic, and optical properties of multiferroic RFeO$_{\mathrm{3}}$ (R $=$ Lu and Yb) thin films, deposited on single crystal sapphire and YSZ substrates under the various growth conditions using RF Magnetron Sputtering. Growth temperature and annealing are found to be critical to stabilize hexagonal RFeO$_{\mathrm{3}}$ thin films. Based on the X-ray diffraction data, annealing above \textasciitilde 900 $^{\mathrm{0}}$C has been found to change the crystal structure of RFeO$_{\mathrm{3}}$ from a metastable hexagonal to an orthorhombic structure. Optical spectroscopy in the 0.5-6.5 eV range has been used to study the optical and electronic excitations of the RFeO$_{\mathrm{3}}$ thin films. The electronic excitations dominated by Fe d to d on-site as well as O 2p to Fe 3d, R 6s, and R 5d charge-transfer transitions for hexagonal and orthorhombic RFeO$_{\mathrm{3}}$ are distinctly different, consistent with the excitations from the FeO$_{\mathrm{5}}$ and FeO$_{\mathrm{6}}$ building blocks for hexagonal and orthorhombic RFeO$_{\mathrm{3}}$, respectively. Further, the optical spectra exhibit strong temperature dependence with an anomaly at the magnetic transition, indicating a structural distortion. We'll also present the magnetic measurements data on the RFeO$_{\mathrm{3}}$ thin films. [Preview Abstract] |
Tuesday, March 14, 2017 1:15PM - 1:27PM |
F43.00009: Strain control of cationic distribution and magnetism in Bi$_{\mathrm{4}}$Ti$_{\mathrm{3}}$O$_{\mathrm{12}}$-BiFeO$_{\mathrm{3}}$ composite thin films Chang Hee Sohn, Dongkyu Lee, Xiang Gao, Ho Nyung Lee Advancing synthesis science, i.e., knowing not only what kinds of materials are needed, but also how to realize them, is highly desirable to effectively develop materials with novel functionalities and/or desired physical properties. Here, by using pulsed laser epitaxy, we experimentally examine a recent theoretical prediction [A. Y. Birenbaum and C. Ederer, Appl. Phys. Lett. \textbf{108}, 082903 (2016)] on controlling the cationic distribution of magnetic Fe and relevant magnetism in Bi4Ti3O12-BiFeO3 (BTFO) by strain engineering. Bulk Bi4Ti3O12-BiFeO3 (BTFO) is known as a ferroelectric and canted antiferromagnetic material with the layered Aurivillius structure, where Ti and Fe ions are rather randomly distributed. Recently, the above-mentioned density functional theory calculations showed a possibility of site-specific substitution of Fe for Ti by epitaxial strain. This site preference of magnetic Fe ions is expected to control the magnetism. We have epitaxially designed BTFO films on various perovskite substrates in order to control the sign and degree of strain. Detailed studies on identifying strain control of the cationic distribution and magnetism were performed and will be presented based on results from x-ray diffraction, atomic-resolution scanning transmission electron microscopy/electron energy loss spectroscopy, and various magnetic measurements. [Preview Abstract] |
Tuesday, March 14, 2017 1:27PM - 1:39PM |
F43.00010: Giant Piezoelectricity Driven Magnetoelectric Coupling in a Multiferroic Heterostructure Membrane J. Irwin, M. S. Rzchowski, W. J. Maeng, S. Lindemann, A. Brewer, J. Frederick, J. Gienkie, T-H. Kim, C.-B. Eom Ferromagnets coupled by strain to piezoelectrics form a promising paradigm for creating useful magnetic devices controlled by electric fields. Such control has been demonstrated in bulk materials. However, in thin films the piezoresponse of the ferroelectric is reduced by substrate clamping. Here we prepared ferromagnetic thin films on freestanding ferroelectric $Pb(Mg_{1/3}Nb_{2/3}O_{3} - PbTiO_{3}$ (PMN-PT) membranes. Using spatially resolved MOKE magnetometry, we demonstrated the rotation of the in-plane magnetic anisotropy of the ferromagnetic films upon the application of electric potentials less than $\pm$ 10 V. The magnetoelectric coupling coefficients of the devices were about 10$^{-7}$ s/m at room temperature. [Preview Abstract] |
Tuesday, March 14, 2017 1:39PM - 1:51PM |
F43.00011: Engineering the ferroic orders at BiFeO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ interfaces Er-Jia Guo, Jonathan Petrie, Manuel Roldan, Qian Li, Ryan Desautels, Timothy Charlton, Andreas Herklotz, John Nichols, John Freeland, Sergei Kalinin, Ho Nyung Lee, Michael Fitzsimmons Artificially engineered heterostructures enable new functionalities that cannot be realized from the individual constituents. Utilizing the external stimulations, like strain and electrostatic doping, gives a good handle to investigate the ferro-orders in multiferroic hybrids. In this talk, we first show the ferroelectric switching dynamics of BiFeO$_{3}$ (BFO) capacitors can be effectively controlled by applying in-situ reversible controlled strain through a piezoelectric substrate. The domain dynamics under different strain states are studied using a piezoresponse force microscopy (PFM). The velocity of ferroelastic domain walls can be reversibly changed by more than one order of magnitude through simply modulating the strain of the order of \textasciitilde 0.1{\%}. In the second part of the talk, we will report a ferromagnetic state is observed in the entire BFO layers, sandwiched between two manganite layers. While the BFO ultrathin layers maintain a good ferroelectric property, both polarized neutron reflectometry and x-ray magnetic circular dichroism reveal that the spin state of BFO is anti-parallel to the magnetization of LSMO. We attribute the novel ferromagnetic state of BFO is related to the electronic orbital reconstruction at the interfaces. [Preview Abstract] |
Tuesday, March 14, 2017 1:51PM - 2:03PM |
F43.00012: Fabrication and characterization of ferroelectric-ferromagnetic heterostructures BZT-BCT/LSMO/LAO using pulsed laser deposition Md Abdullah Al Mamun, Anthony Pelton, Bithi Paul, Mahmud Reaz, Haribhau Gholap, Kartik Ghosh We report multiferroic properties of ferroelectric-ferromagnetic(FE-FM) heterostructures using lead-free perovskite oxides 0.5Ba(Zr$_{\mathrm{0.2}}$Ti$_{\mathrm{0.8}})$O$_{\mathrm{3}}$-0.5(Ba$_{\mathrm{0.7}}$Ca$_{\mathrm{0.3}})$TiO$_{\mathrm{3}}$(0.5BZT-0.5BCT) and La$_{\mathrm{0.7}}$Sr$_{\mathrm{0.3}}$MnO$_{\mathrm{3}}$(LSMO). The heterostructures 0.5BZT-0.5BCT/LSMO/LAO were fabricated by PLD. The epitaxial nature of the films has been established through XRD. The observation of only (00l) peaks in the theta-2theta scan and small FWHM (0.11 degree) of the rocking curve performed at (002) peak indicates the quality of out-of-plane alignment and the phi-scan provides the in-plane orientation. The polarization switching has been observed with a remnant polarization of 5$\mu$ C/cm$^{\mathrm{2}}$ and coercive field of 170kv/cm. A well-behaved room temperature M-H hysteresis loop has been observed for LSMO and 0.5BZT-0.5BCT/LSMO films indicating the room temperature ferromagnetic behavior. Temperature-dependent magnetization of the films showed a paramagnetic to FM transition at about 360 K, which agrees with the literature. Also, ferromagnetic resonance data support the static magnetization data obtained using SQUID magnetometer. This work is supported by AFRL. [Preview Abstract] |
Tuesday, March 14, 2017 2:03PM - 2:15PM |
F43.00013: Probing microwave absorption at periodic domain walls induced by domain wall vibration Yen-Lin Huang, Lu Zheng2, Ying-Hao Chu, Keji Lai Multiferroic domain walls can serve as the building blocks for new generation electronics due to their novel functionalities and the nature of fine feature and electrically controllable motion. In the last decades, researchers have shown that domain wall can exhibits physical properties that would not be found in its parent domain, such as conductive or superconductive domain walls in insulating materials and ferromagnetic domain walls in antiferromagnets. Here, we demonstrate an extraordinary microwave absorption induced by domain wall vibration at as-grown 1-D array of charge neutral domain walls in BiFeO$_3$ thin film with microwave impedance microscopy. The energy dispassion induced by domain wall vibration has been simulated and supported by finite element analysis. In contrast to the charge neutral domain walls, the microwave absorption observed at charged domain walls is attributed to the enhanced DC conductivity at the walls. Our observation deepens the understanding of microwave absorption behaviors at the domain wall in BiFeO$_3$ under a wide range of microwave frequency and might pave the way to next-generation RF devices. [Preview Abstract] |
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