Bulletin of the American Physical Society
63rd Annual Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
Volume 55, Number 7
Monday–Friday, October 4–8, 2010; Paris, France
Session ET3: Plasma Deposition I |
Hide Abstracts |
Chair: Y. Setsuhara, Osaka University Room: 262 |
Tuesday, October 5, 2010 4:00PM - 4:15PM |
ET3.00001: Density of copper atoms in the ground and metastable states in an argon magnetron discharge correlated to the Cu deposition rate Nader Sadeghi, Hamid Naghshara, Sirous Khorram, Samad Sobhanian Resonance absorption technique is used to measure the density of copper atoms in the ground state Cu ($^{2}$S$_{1/2})$ and metastable state Cu*($^{2}$D$_{5/2})$ in a DC magnetron plasma at different argon pressure ($p$=0.3 to14 $\mu $bar) and discharge power (W=10 to 200 W). The gas temperature is also deduced from the spectral profile of the $N_{2}(C^{3}$\textit{$\Pi $}$_{u}-B^{3}$\textit{$\Pi $}$_{g})$ 0-0 emission band when trace of nitrogen is added to the feed gas. Our results show that with increasing $p$ and $W$, the density of Cu*($^{2}$D$_{5/2})$ metastable atoms can exceed that of the ground state copper atoms. It comes out that copper atoms sputtered from the target are mainly in the ground state but in the presence of the plasma, an important part of these atoms is transferred, by electron impact excitation, to the metastable states. The deposition rate on a quartz $\mu $-balance, located at 18 cm from the target, is perfectly correlated to the total density of copper atoms in both Cu ($^{2}$S$_{1/2})$ and Cu*($^{2}$D$_{5/2, 3/2})$ states. These experimental results are supported by a Monte Carlo simulation of the Cu atoms transport from the target to the substrate. [Preview Abstract] |
Tuesday, October 5, 2010 4:15PM - 4:30PM |
ET3.00002: TiO$_{2}$/Polyaniline nanocomposite films prepared by modified plasma polymerization process Joyanti Chutia, Arup Ratan Pal, Bimal Kumar Sarma The applicability of simultaneous process of reactive magnetron sputtering and plasma polymerization for synthesis of nanocomposite thin films of metal oxide/conducting polymer has been investigated. Films of 400--500 nm thickness are deposited in a plasma system and process parameters have been optimized for the formation of TiO$_{2}$/polyaniline nanocomposite films. Chemical compositions of the films are carried out using Fourier Transform Infrared Spectroscopy. The X-Ray Diffraction patterns of the composite films reveal the presence of nanocrystalline rutile TiO$_{2}$ with crystallite size of 3-5 nm. The surface morphology studied using tapping mode Atomic Force Microscopy shows uniform surface with rms roughness of 2.59 nm. The ac conductivity measured with LCR meter in the frequency range 100 Hz--1 MHz in metal-composite-metal sandwiched structure shows significant improvement as compared to plasma polymerized aniline. [Preview Abstract] |
Tuesday, October 5, 2010 4:30PM - 4:45PM |
ET3.00003: Atmospheric pressure plasma liquid deposition of Cu nanoparticles onto P4VP-grafted-PTFE surface and their autocatalytic characteristics Nobuyuki Zettsu, Hiroki Akiyama, Kazuya Yamamura We have demonstrated atmospheric pressure plasma-assisted Cu nanoparticle (NP) deposition onto a P4VP-g-PTFE surface, as well as their autocatalytic properties for the initiation of the following electroless Cu plating. The plasma-induced reduction of the organo-copper precursor gradually increased the surface Cu concentration owing to the formation of the Cu NPs with treatment time. The concentration became maximal, and then it progressively decreased with further plasma treatment. XPS, SEM, and AFM experiments revealed that the total population of NPs on the surface was clearly decreased, while the particles continued to grow. We found that thermodynamically driven spontaneous migration of Cu atoms occurred from the initially formed smaller particles to the larger ones, by the Ostwald ripening. The polymer surface densely seeded with Cu NPs enable the initiation of autocatalytic electroless deposition of copper layer with less than 5 s time lag. [Preview Abstract] |
Tuesday, October 5, 2010 4:45PM - 5:00PM |
ET3.00004: Formation of Highly-Ordered Nanoparticle Structure Using Controlled Gas-Liquid Interfacial Plasmas Toshiro Kaneko, Takashi Harada, Rikizo Hatakeyama Highly-ordered metal nanoparticle structures have high catalytic activity and unique photosensitive reactivity due to their size effects. To realize the highly-ordered nanoparticles, nanoparticles conjugated with carbon nanotubes are synthesized using a novel plasma technique combined with introduction of ionic liquids under low gas pressures. It is revealed that the discharge plasma and ionic liquid interfacial field can be controlled and be advantageous to directly synthesize abundant metal nanoparticles by the plasma reduction of metal chloride in the nano-spaces of the carbon nanotubes. As a result, mono-dispersed and high-density metal nanoparticles intercalated into the carbon nanotubes are synthesized and the nanoparticles are found to be well-aligned in the interlayer of the carbon nanotubes. This method could contribute to supplying a considerable amount of highly-ordered nanoparticles available for the development of unique nanoelectronics devices. Furthermore, we try to control the nano-scale structure of the plasma at the gas-liquid interface using strong magnetic fields up to 4 tesla and the highly-ordered nanoparticles are expected to be synthesized in accordance with the plasma structure. [Preview Abstract] |
Tuesday, October 5, 2010 5:00PM - 5:15PM |
ET3.00005: Effect of dual HiPIMS discharge parameters on formation and crystallography of antimicrobial Ti-Cu films Rainer Hippler, Vitezslav Stranak, Harm Wulff, Robert Bogdanowicz, Zdenek Hubicka, Carmen Zietz, Rainer Bader The formation of thin Ti-Cu films at different conditions is studied as an important parameter of bone-contacting parts of joint endoprothese coating. Ti-Cu films provide an antibacterial effect combined with decent cellular adhesion of osteoblasts on the surface. These properties are strongly influenced by stoichiometry and crystallographic structure of the Ti/Cu films. The antimicrobial effect is caused by copper released from metallic structure. The Ti-Cu thin films were prepared by (i) dual pulsed magnetron sputtering at a repetition frequency of 4.65 kHz and (ii) dual High Power Impulse Magnetron Sputtering (HiPIMS) at a repetition frequency of 100 Hz. Crystallographic phases and chemical composition of deposited thin films are diagnosed by grazing incidence x-ray diffractometry, x-ray photoelectron spectroscopy, and energy dispersive X-ray spectroscopy. The copper release from the thin films after insertion into Dulbecco's Modified Eagle Medium is measured by absorption spectrometry. Results are compared and discussed together with time resolved plasma diagnostics (ion flux, Langmuir probe, optical emission spectroscopy). [Preview Abstract] |
Tuesday, October 5, 2010 5:15PM - 5:30PM |
ET3.00006: Deposition of a-C:H:N plasma polymer thin films for the functionalization of textiles Sebastien Guimond, Dirk Hegemann Plasma processing is seen as an attractive alternative method to add new functionalities to textiles since it is a versatile and dry technology. Because plasma processing results in a nano-scaled surface modification, it also has the advantage of preserving the bulk properties of the textiles. In this study, plasma polymer thin films have been deposited on various polyester fabrics of defined structure using NH3/C2H4 low pressure RF glow discharges. The films were characterized using XPS, FTIR and AFM as a function of the plasma process parameters. For a defined range of energy input and NH3/C2H4 gas flow ratio, the coatings are nanoporous and contain amine functional groups. These films can thus serve as high specific surface area templates for further surface functionalization. For instance, the amine groups contained in the films were used to covalently bind molecules containing OH and CF3 end-groups, giving the fabrics hydrophilic or hydrophobic properties, respectively. The properties of the coated fabrics remain generally rather stable during abrasion tests, presumably due to the high crosslinking degree of the films. The scalability of the process investigated in this work has been demonstrated using a pilot-scale continuous web coater. [Preview Abstract] |
Tuesday, October 5, 2010 5:30PM - 5:45PM |
ET3.00007: Internal DLC Coating of Narrow Metal Tubes with High-Density Near Plasma Sustained by Microwave Propagation along Plasma-Sheath Interfaces Hiroyuki Kousaka Recently, internal DLC coating of metal tubes is strongly desired. Plasma processing of such a 3-dimensional metal substrate is typically conducted by using RF and DC plasmas where negative voltage is applied to a metal substrate against a grounded chamber at low gas pressures. However, the typical plasma electron density, $n_{e}$ of RF and DC plasmas is no more than 10$^{9}-$10$^{10}$ cm$^{-3}$, by which internal processing of metal tubes less than 1 cm in width cannot be performed under typical conditions. For internal plasma processing of such narrow metal tubes, generation of higher-density ($n_{e}>$10$^{11}$ cm$^{-3})$ plasma inside a tube is essential. In our previous works, it was demonstrated that plasma column is steadily sustained inside a narrow metal tube, whose inner diameter is in the range of millimeters and the length is more than 10 times of it, by using high-density near plasma sustained by microwave propagation along plasma-sheath interfaces. In this work, the inner surface of a stainless-steel tube (SUS304, JIS) 4.4 mm in inner diameter and 50 mm in length was coated with DLC by using the plasma column. This work was partly supported by a Grant-in-Aid for Young Scientists (B), No. 19740343 (2007-2008), from the Japan Society for the Promotion for Science, and Tokai Region Nanotechnology Manufacturing Cluster, Knowledge Cluster Initiative (The Second Stage, 2008-). [Preview Abstract] |
Tuesday, October 5, 2010 5:45PM - 6:00PM |
ET3.00008: Deep Silicon Trench Oxidation in Downstream of Surface-wave Oxygen Plasma Haruo Shindo, Jyun Koike, Yuuto Igarashi The shallow trench isolation (STI) technique in ULSI is inevitable to realize further integrations. However, a filling technique of insulation materials into trench by chemical vapor deposition (CVD), which has been conventionally employed in STI, becomes more severe. A direct oxidation of the trench surfaces by plasma is one of the candidates and this should be ion-assisted for directionality but with low damage. In this work, a silicon trench oxidation is investigated by employing a microwave oxygen plasma downstream under the condition of radio-frequency bias as well as the DC. In particular, the radio-frequency bias and the DC are superimposed and applied onto the substrate with the trench structure, and the oxidation rates at various portions of trench are examined as a function of the superimposed substrate bias. The oxidation depth shows a maximum in a very downstream of further position from the microwave window. The silicon trench oxidation mapping clearly demonstrates that the maximum is brought about along the line of the substrate bias of +20 V just above the plasma potential. In particular, the silicon trench bottom oxidation is just limited onto the higher radio frequency bias within the above condition. It is concluded that the oxidation is due to the negative oxygen ions in downstream. [Preview Abstract] |
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700