Bulletin of the American Physical Society
49th Annual Meeting of the APS Division of Atomic, Molecular and Optical Physics APS Meeting
Volume 63, Number 5
Monday–Friday, May 28–June 1 2018; Ft. Lauderdale, Florida
Session Q04: Trapped Ions II |
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Chair: Norbert Linke, JQI, University of Maryland Room: Grand C |
Thursday, May 31, 2018 8:00AM - 8:12AM |
Q04.00001: Fast Ion Transport and Separation in a Cryogenic Surface Electrode Trap Susanna L. Todaro, Dietrich Leibfried, Daniel H. Slichter, Andrew C. Wilson, David J. Wineland Significant progress has been made in trapped-ion quantum computation, but scaling to increasingly large numbers of qubits remains a challenge. In one proposal, the ``quantum CCD" architecture, ion qubits are transported between trapping zones dedicated to memory, readout, or gate operations. In most prior quantum CCD experiments, ion transport between zones and ion separation into multiple wells have been performed adiabatically. These processes generally take an order of magnitude more time than typical laser-driven gate operations. While faster ion transport has been previously achieved in multizone 3D Paul traps, separation experiments have only operated in the adiabatic regime so far. We report progress towards diabatic transport and separation of ions in a cryogenic surface-electrode trap with a 40 $\mu$m ion-electrode distance, which allows the strong electric field and quartic potential components useful for fast separation to be generated more readily. [Preview Abstract] |
Thursday, May 31, 2018 8:12AM - 8:24AM |
Q04.00002: 1+1 REMPI of SiO for loading cold SiO$^+$ into an ion trap Patrick Stollenwerk, Ivan Antonov, Brian Odom Performing spectroscopy on molecular ions is difficult due to low phase space density of thermal populations and low number densities from Coulomb repulsion. Rapid and efficient loading of an ion trap is important for gathering the necessary statistics to study internal state dynamics and long-lived states of molecular ions. In this talk we present our measurement of the IP and 1+1 REMPI spectrum of SiO and discuss a fortuitous near ionization threshold feature that allows for efficient loading of rotationally and vibrationally cold SiO$^+$ into an ion trap. [Preview Abstract] |
Thursday, May 31, 2018 8:24AM - 8:36AM |
Q04.00003: Electric field noise in surface ion traps Crystal Noel, Maya Lewin-Berlin, Clemens Matthiesen, Stanley Liu, S. Matthew Gilbert, Hartmut Haeffner Trapped ions provide a suitable platform for quantum information applications due to long coherence times and the ability to control their quantum state with high precision. In order to scale to many qubits and allow for fast processing, traps are getting smaller and ions are trapped closer to the surface. An unfortunate consequence of proximity to the surface is increased sensitivity to electric field noise caused by the surface of the trap. This leads to undesired decoherence of the ion motion, thereby limiting multi-qubit gate fidelities. We present recent results exploring the frequency scaling of the measured noise and effects on the noise of heating the trap substrate above room temperature. [Preview Abstract] |
Thursday, May 31, 2018 8:36AM - 8:48AM |
Q04.00004: Cryogenic Trapped-Ion System for Large Scale Quantum Simulation Wen Lin Tan, Guido Pagano, Harvey Kaplan, Paul Hess, Patrick Becker, Antonios Kyprianidis, Jiehang Zhang, Christopher Monroe, Phil Richerme, Yukai Wu Trapped ion systems are a leading platform for quantum simulation of spin models. Current experiments are limited to less than 55 ions due to collisions with background gas that destroy the ion crystal. Here, we present a novel cryogenic ion trapping system designed for large scale quantum simulation of spin models. The apparatus is a segmented blade trap enclosed in a 4 K cryostat, which enables us to routinely trap above 100 $^{171}$Yb$^+$ ions in a linear configuration with an ion chain lifetime more than four hours due to a low background pressure from differential cryo-pumping. We characterize the cryogenic vacuum by using the ion crystals as pressure gauge by measuring both inelastic and elastic collision rates with the molecular background gas. We also show the capability of reducing the ion space inhomogeneity for chains with up to 44 ions by means of anharmonic axial potential. With these improvements, we are moving forward to perform large scale quantum simulation of spin models that will challenge classical simulators. [Preview Abstract] |
Thursday, May 31, 2018 8:48AM - 9:00AM |
Q04.00005: Integrated Electronics for Chip-Scale Trapped-Ion Quantum Control Jules Stuart, Rich Panock, Colin Bruzewicz, Jonathon Sedlacek, Robert McConnell, Jeremy Sage, John Chiaverini Trapped-ion quantum information-processors offer many advantages for achieving high-fidelity operations, but current experiments are typically composed of large components that do not scale well with increasing numbers of ions. In order to achieve Moore’s-law-like growth, control systems must be integrated into a single device, using technologies that can be scaled. We demonstrate the operation of a new ion-trap design that incorporates on-chip, high-voltage CMOS electronics ($\pm$8V full swing) to generate the surface-electrode control potentials without the need for external analog voltage sources. Instead, a single digital bus programs all of the digital-to-analog converters (DACs) that control the segmented electrodes. We have used the electronics to change the applied voltages and repeatedly shuttle ions distances of 50 $\mu$m without significantly affecting the ion lifetime. Additionally, we have augmented the integrated CMOS amplifier circuit to include analog switches for reducing amplifier noise without compromising electrode voltage update speed. Integration of control circuits into a space smaller than the extent of an electrode will enable future ion trap designs in which the number of electrodes makes external sources, feedthroughs, and wire bonds impractical. [Preview Abstract] |
Thursday, May 31, 2018 9:00AM - 9:12AM |
Q04.00006: A Compact Cryogenic Package Approach to Ion Trapping Robert Spivey, Volkan Inlek, Geert Vrijsen, Yuhi Aikyo, Megan Ivory, Alex Kato, Evan Salim, Peter Maunz, Andrew Hollowell, Jungsang Kim One challenge for the expansion of trapped ion systems to a large scale is the lack of repeatable integration technology to realize compact and stable operating environment. We present a novel ion trap package where conventional ultra-high vacuum (UHV) chambers are replaced with a hermetically sealed package operating in a cryogenic (5K) environment. A microfabricated surface ion trap mounted on a modified 100-pin ceramic pin grid array (CPGA) package is placed into a UHV environment. A titanium lid with windows for optical access is then attached to the CPGA via an indium seal. This seal, along with the cryogenic pumping and activated charcoal getters maintains the UHV conditions for the ion trap. Laser ablation is used to load Ytterbium ions from a target inside the small package. We present progress towards trapping in this environment as well as characterization of the ablation source. [Preview Abstract] |
Thursday, May 31, 2018 9:12AM - 9:24AM |
Q04.00007: Laser ablation loading of Yb$+$ ions in a surface trap Yuhi Aikyo, Geert Vrijsen, Robert S. Spivey, Volkan Inlek, Jungsang Kim We demonstrate and characterize laser ablation loading of Yb$+$ ions in a surface trap. Ablation loading holds several advantages over traditional thermal ovens. The lack of required heat source makes it possible to use ablation loading in cryogenic systems. Additionally, the pulsed nature of the system can provide loaded ions much more quickly and reliably. We ablate Yb atoms using a Q-switched Nd:YAG pulsed laser (1064 nm wavelength, 8 ns pulse length). Time-of-flight spectroscopy was performed to characterize temperature and stream velocity of the ablated atoms, as well as to determine and increase the number of trappable atoms produced as a function of ablation laser fluence. As a result, we achieved 56{\%} successful trapping rate per pulse, or a mean number of 1.7 pulses per successful trapping attempt. This method of ablation loading into a surface trap will be used in a compact cryogenic ion trap system. [Preview Abstract] |
Thursday, May 31, 2018 9:24AM - 9:36AM |
Q04.00008: Microfabricated Microwave-Integrated Surface Ion Trap Melissa C Revelle, M. G. Blain, R. A. Haltli, A. E. Hollowell, D. Lobser, C. D. Nordquist, J. Rembetski, P. Resnick, Peter Maunz Microwave radiation is easier to control and stabilize than lasers and is a candidate for realizing high-fidelity qubit manipulations\footnote{D. P. L. Aude Craik. et al., Appl. Phys. B 114, 3 (2014).}. However, strong near-field microwave radiation is necessary for creating the large gradient field required for multiple-ion gates \footnote{T. P. Harty, et al., PRL 117, 140501 (2016); U. Warring et al., PRL 110, 173002 (2013).}. Taking advantage of Sandia's microfabrication techniques, we designed and manufactured a multi-layered surface ion trap with co-located microwave antennae and ion trap electrodes. The near-field integrated antennae can produce stronger fields and field gradients at the ion than are possible with far-field radiation. Using this trap, we measure a 300~ns carrier $\pi$-time and demonstrate qubit motional mode addressing. We present our results on the microwave field characterization along with single qubit operations. [Preview Abstract] |
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