Bulletin of the American Physical Society
Joint Fall 2017 Meeting of the Texas Section of the APS, Texas Section of the AAPT, and Zone 13 of the Society of Physics Students
Volume 62, Number 16
Friday–Saturday, October 20–21, 2017; The University of Texas at Dallas, Richardson, Texas
Session K3: Materials Science II
10:30 AM–11:54 AM,
Saturday, October 21, 2017
DGAC
Room: 1.102C
Chair: Bing Lv, University of Texas at Dallas
Abstract ID: BAPS.2017.TSF.K3.4
Abstract: K3.00004 : All-Oxide Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$-NiO$_{\mathrm{x}}$ PN Junction Diodes Enabled by Tunable Electrical and Optical Properties of Nickel Oxide (NiO$_{\mathrm{x}})$ and Gallium Oxide (Ga$_{\mathrm{2}}$O$_{\mathrm{3}})$ Thin Films Deposited by Pulsed Laser Deposition at Room Temperature*
11:06 AM–11:18 AM
Preview Abstract Abstract
Authors:
Maria Isabel Pintor Monroy
(Univ of Texas, Dallas)
Bayron Lennin Murillo-Borjas
(Univ of Texas, Dallas)
Diego Barrera
(Univ of Texas, Dallas)
Julia W.P. Hsu
(Univ of Texas, Dallas)
Husam N. Alshareef
(King Abdullah University of Science and Technology)
Manuel A. Quevedo-Lopez
(Univ of Texas, Dallas)
*All-Oxide Ga2O3-NiOx PN Junction Diodes Enabled by Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) and Gallium Oxide (Ga2O3) Thin Films Deposited by Pulsed Laser Deposition at Room Temperature
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.TSF.K3.4
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