Bulletin of the American Physical Society
Joint Fall 2009 Meeting of the Texas Sections of the APS, AAPT, and SPS
Volume 54, Number 13
Thursday–Saturday, October 22–24, 2009; San Marcos, Texas
Session A1: Opening and Invited Session |
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Chair: David Donnelly, Texas State University Room: LBJ Student Center Ballroom |
Friday, October 23, 2009 8:00AM - 8:15AM |
A1.00001: Introduction and Announcements from the Local Organizing Committee |
Friday, October 23, 2009 8:15AM - 8:30AM |
A1.00002: Welcome Invited Speaker: |
Friday, October 23, 2009 8:30AM - 9:06AM |
A1.00003: Etch-a-Sketch Nanoelectronics Invited Speaker: The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. ~The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. ~By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. ~This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research. [Preview Abstract] |
Friday, October 23, 2009 9:06AM - 9:42AM |
A1.00004: Polarization Electronics -- A Path to Multifunctional Materials Invited Speaker: Multifunctional materials are those which will lead to new and innovative devices that can serve multiple functions within a given system. An oft-overlooked parameter in devices is the presence of induced or spontaneous polarization which provides an added degree of freedom for fabrication of structures for electronics and photonics. We present two approaches -- spontaneous polarization in GaN for nanoscale photonic structures, and the integration of complex oxides with GaN for induced polarization electronics. The Group III-Nitrides lack inversion symmetry that leads to a large crystal polarization resulting in both spontaneous and piezoelectric polarization. This has been viewed as a problem since built-in fields due to polarization can produce Stark shifts in devices, or charge build-up at heterojunctions. However, this also brings the potential for designing new device types. Polarization discontinuities can be used to produce regions of localized charge, allowing electronic devices to be fabricated without the need for adding extrinsic doping impurities. Combination with other materials such as ferroelectrics provides an induced polarization discontinuity that can be tunable, leading to variable and controllable polarization charge densities. [Preview Abstract] |
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