Evaluation of Zirconium (Zr) thin films deposited on Si(100) by Pulsed Laser Deposition.*

The Zirconium (Zr) thin films deposited on Si(100) by Pulsed Laser Deposition with a 248 nm KrF excimer laser at varying substrate temperatures (25°C, 100°C, 200°C, 300°C, 400°C, and 500°C) and a laser fluence of 7 J/cm². XRD data revealed that optimal crystalline films were obtained at 400°C. The Zr(100) crystalline peak was prominent at 100°C, 200°C, and 300°C but showed reduced intensity at 400°C. Conversely, the Zr(002) peak exhibited the highest intensity and narrowest width at 400°C, while its intensity decreased at 500°C, suggesting that 400°C produces the highest crystallinity with the excimer laser. However, the Zr(102) peak appeared for the first time at 500°C. SEM images show that the number and size of particulates decreased at 400°C compared to higher temperatures. XRD, SEM, and AFM analysis revealed distinct patterns and peaks related to laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.