Suppression of the Optical Linewidth and Spin Decoherence in Diode-Embedded Spin Centers: Leveraging Advanced Optimization Algorithms*

Reducing noise experienced by spin centers constitutes one of the main goals of solid-state-based quantum technologies. Embedding spin centers in p-n diodes under reverse bias voltage has been proven to be a suitable technique to reduce charge noise while controlling the wavelength emission [1,2]. Given the multiple combinations of manufacturing parameters that a diode can have (e.g.: size, doping densities, temperature, bias voltage), a question that has not been answered yet is what set of diode design parameters yields the lowest possible electric noise. In this work, we address this question by developing a scaled-gradient-descent-based algorithm that minimizes the optical linewidth of spin centers. By solving the diode’s Poisson equation, we calculate the noise level that arises from the non-depleted regions using the formalism developed in Candido and Flatté [2]. The noise minimization is subject to physical constraints such as dielectric breakdown, doping densities, temperature, diode’s length, and leakage current.

[1] C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. UI Hassan, N. T. Son, T. Oshima, and D. D. Awschalom, Science 366, 1225 (2019).

[2] Denis R. Candido and Michael E. Flatté, PRX Quantum 2, 040310 (2021).