Alloys*

Band gap of the co-sputtered CdSe_xTe_1-x ternary alloys for various concentration of Se has been calculated using absorbance and photoluminescence (PL) spectra. A clear evidence of band gap bowing with bowing parameter b = (0.81 ± 0.03) was observed consistent with the values reported by the previous researchers. Enhanced grain size and monotonic increase in photogenerated charge carrier lifetime with Se content has also been observed in CdSe_xTe_1-x alloy. We attributed such a prolonged carrier lifetime to the shallowing of sub-gap defect states because of band gap narrowing, and the enlarged grain.