Measuring and Modeling the Influence of Hydrostatic Pressure on the Magnetotransport Properties of Pure Sb$_{2}$Te$_{3}$ Single Crystals*

The effect of hydrostatic pressure up to 16 kbar was investigated in conjunction with the temperature dependence of the magnetotransport properties on a pure Sb$_{2}$Te$_{3}$ single crystal. The results show that an increase in pressure suppresses the electrical resistivity of the sample and increases the magnetoresistance. The Hall coefficient decreased modestly with increasing pressure, and showed some dependence on magnetic field. Below 100 K, the dependence of the resistivity on magnetic field was distinctly non-parabloic. To explain the results one must allow for the possible participation of more than one band in the transport, or for the single-band values of the Hall and structural factor to be different from unity. A single valence band model was used to fit both the magnetoresistance and the Hall effect data which takes into account both the Hall and structural factors as free parameters to determine the sample's carrier concentration and the carrier mobility. The results will be discussed in the context of the potential need to incorporate a second band.