Bulletin of the American Physical Society
24th Annual Meeting of the APS Northwest Section
Thursday–Saturday, June 20–22, 2024; University of Washington - Bothell, Bothell, Washington
Session E02: AMO/Condensed Matter I
1:30 PM–2:18 PM,
Friday, June 21, 2024
University of Washington, Bothell
Room: Discovery Hall 162
Chair: David Laman, Heritage University
Abstract: E02.00002 : Tunable Ultra-Wide Bandgap Semiconductor Alloys*
1:42 PM–1:54 PM
Presenter:
H M Borhanul Alam
(University of Idaho)
Authors:
H M Borhanul Alam
(University of Idaho)
John L Morrison
(Lewis-Clark State College, Lewiston, ID 83501)
Leah Bergman
(Department of Physics, University of Idaho, Moscow ID 83844)
The optical gap of In2O3 is about 3 eV, that of Ga2O3 is 5 eV, by alloying with the desired percentage of the two end-members, alloys with optical gaps between 3 eV to 5 eV can be achieved. The issue is that the crystal structure of beta-Ga2O3 is monoclinic and that of In2O3 is cubic bixbyite, thus solubility across the entire composition range is not possible. The results from the transmission experiments indicate that the nanocrystal alloys are single phase, and soluble up to at least x=0.46 of indium composition. This result is consistent with the previous theory. The optical gap was found to span continuously from 4.86 eV for the beta-Ga2O3 film down to 3.78 eV for the film with x=0.46 indium composition. For higher indium composition x=0.7, the optical gap of the alloy was found to be high; about 4.14 eV instead of following the decreasing trend with indium composition. This implies that the alloy is saturated, it is Ga-rich, and is in the phase separation range. Moreover, a small signal from the optical gap of In-rich ~ 3 eV appeared in the spectrum confirming that in this sample two crystal structures co-exist.
*This research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering, under award DE-FG02-07ER46386.
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