Bulletin of the American Physical Society
New England Section Fall 2022 Meeting
Volume 67, Number 13
Friday–Saturday, October 14–15, 2022; University of New Hampshire, Durham, NH
Session H01: Parallel Invited Session - Condensed Matter III
10:30 AM–11:42 AM,
Saturday, October 15, 2022
University of New Hampshire in Durham
Room: DeMeritt Hall 112
Chair: Shawna Hollen, Brown University
Abstract: H01.00002 : Spectral Diffusion of Phosphorus Donors in Silicon at High Magnetic Field*
11:06 AM–11:42 AM
Presenter:
Chandrasekhar Ramanathan
(Dartmouth College)
Authors:
Lihuang Zhu
(Lam Research)
Ethan Q Williams
(Dartmouth College)
Johan van Tol
(Florida State University)
Chandrasekhar Ramanathan
(Dartmouth College)
Here, we characterize the phase memory time of phosphorus donor electron spins in lightly-doped natural silicon at high magnetic field (8.58 T) in the dark and under optical excitation. At 4.2 K, the spectral diffusion time (TSD) measured in the dark is observed to be about a factor of 2 smaller than that measured at low magnetic fields (0.35 T) at some orientations of the silicon crystal in the external magnetic field. Using a tunable laser we also measured the echo decay as the wavelength of the optical excitation is swept across the band edge from 1050 nm to 1090 nm. At low optical powers, above-bandgap excitation is seen to increase the spectral diffusion time of the donor electron spin at these crystal orientations, while higher power optical excitation is seen to shorten both the T1 and T2 of the donors significantly. Electron-nuclear double resonance experiments suggest that low power optical excitation modulates the hyperfine interactions in the sample.
*We acknowledge support from the NSF through cooperative agreement OIA-1921199 and Award No. 1747426 (QISE-NET). Work at the National High Magnetic Field Laboratory is supported by the NSF (DMR-1644779) and the State of Florida.
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