Bulletin of the American Physical Society
2023 Annual Meeting of the APS Mid-Atlantic Section
Friday–Sunday, November 3–5, 2023; University of Delaware, Newark, Delaware
Session B02: Magnetism and Spintronics
5:00 PM–6:36 PM,
Friday, November 3, 2023
University of Delaware
Room: Gore 104
Chair: Hang CHEN, CUHK
Abstract: B02.00002 : THz pulse shaping using broadband spintronic – III/V semiconductor hybrid emitters*
5:36 PM–5:48 PM
Presenter:
Weipeng Wu
(University of Delaware)
Authors:
Weipeng Wu
(University of Delaware)
Wilder Acuna Gonzalez
(University of Delaware)
Subhash Bhatt
(University of Delaware)
Zhixiang Huang
(University of Delaware)
Charles Y Ameyaw
(N/A)
Owen J Shullaw
(Purdue University)
Xi Wang
(University of Delaware)
Lars Gundlach
(University of Delaware)
Joshua Zide
(University of Delaware)
Matthew F Doty
(University of Delaware)
M. Benjamin Jungfleisch
(University of Delaware)
Collaborations:
IRG2 team, UD MRSEC
Here, we report tunable pulse shaping and polarization control of THz radiation by combining a spintronic THz emitter with a III/V semiconductor-based PCA. The presented hybrid emitter combines the advantages of PCAs such as high signal strength with the versatility of spintronic THz sources. The sample structure consists of a lithographically- defined PCA made of the III/V semiconducting material ErAs:GaAs grown by molecular beam epitaxy and a magnetic heterostructure of Ta/CoFeB/Pt deposited by magnetron sputtering on two sides of a GaAs substrate respectively. The hybrid emitter is combined with a hyperhemispherical Si lens for a better collection of the THz radiation. The device is excited by two femtosecond laser beams of distinct wavelengths: a laser beam with a central wavelength of 780 nm is used to excite the PCA, while a second laser beam of 1560 nm wavelength is used to excite the spintronic emitter. Varying the relative delay between the THz pulses from the two sources enables efficient pulse shape control of the combined THz wave. The relative intensity and angle between the two THz electric fields can be tuned by external parameters such as laser power, bias voltage, and applied magnetic field, enabling an extraordinary high-level control of the emitted THz wave.
*This research was supported by NSF through the University of Delaware Materials Research Science and Engineering Center, DMR-2011824.
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