Spin Control of Silicon-Vacancy Centers in Nanodiamonds*

For the realization of quantum networks, qubits that can be interfaced with scalable photonic technologies are of major interest. Due to their good optical and spin properties, group IV defects in diamond are promising candidates for these applications [1]. We are using negatively-charged Silicon-vacancy centers (SiV) hosted in nanodiamonds that can be integrated into conventional photonic structures [2,3]. Compared to bulk diamond, SiVs hosted in a nanodiamond experience less dephasing due to a combination of locally modified phonon density of states and increased ground-state splitting [4,5]. Hence, they are a candidate for operation above mK temperature, decreasing the technological overhead. Here, we present our progress in characterizing and controlling spin qubits of SiVs in nanodiamonds at liquid Helium temperature for future application in quantum networks.