Flat-band Generation in InAs/GaSb Quantum Wells Through Vertically Engineered Heterostructures*

This work explores the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures. These artificial quantum materials offer a reproducible means for producing flat-band materials via MBE growth. The use of III-V semiconductors as a foundational platform provides unique advantages, including robust spin-orbit coupling and bandgap engineering, which are not readily attainable in traditional moiré superlattice (SL) materials. Our study includes magnetotransport and FTIR magneto-spectroscopy studies of high-quality InAs/GaSb SLs, accompanied by k·p calculations, which illustrate the flattening of bands in vertically designed heterostructures.