Resistance Switching in Freestanding BaTiO3 Membranes*

The recent development of freestanding layers of transition metal oxides has overcome limitations imposed by their epitaxial growth, enabling their manipulation as 2D layered (van der Waals) materials. This has opened the path for new material combinations that may be the seed of new functionalities [1-2].

In our study, freestanding films of the ferroelectric oxide BaTiO3 with thickness down to 8 nm were released from the substrate and functionalized in junctions with metallic electrodes. Perpendicular electric transport measurements across these freestanding oxide sheets have revealed non-volatile resistive switching behavior, which exhibits memristive functionalities, a key requirement for neuromorphic circuits. The synergy between the memristive effects of layered oxides and other material families is anticipated to inspire innovative device concepts which may contribute to the energy efficiency of data processing.

 

References:

[1] D. Lu et al., Nat. Mater., 15, 1255 (2016)

[2] S. S. Hong et al., Science, 368, 71 (2020)