Integer and fractional quantum anomalous Hall effects in 2D semiconductor moiré superlattices

The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall effects without the need for an external magnetic field. These effects are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) effects. In this talk, I will mainly present electrical transport studies of moiré superlattices built on 2D transition metal dichalcogenide (TMDc) semiconductors. We have successfully achieved highly tunable topological phases in both TMDc heterobilayer and TMDc homobilayer moiré superlattices. Specifically, we have observed a robust IQAH effect and signatures of quantum spin Hall effect in AB-stacked WSe2/MoTe2. Furthermore, both the IQAH effect and the long-sought FQAH effect have been realized in twisted bilayer MoTe2. The band topology in TMDc moiré superlattices is highly tunable by external electric fields, which enable us to realize novel topological quantum phase transitions. Our studies pave the path for the investigation of fractionally charged excitations and anyonic statistics at zero magnetic field based on 2D moiré materials.

[1] F. Xu et al. PRX 13, 031037 (2023).

[2] T. Li et al. Nature 600, 641-646 (2021).

[3] T. Li et al. Nature 597, 350-354 (2021).