grown by metalorganic molecular beam epitaxy*

The high spin-orbit coupled correlated material SrIrO₃ has been predicted to host novel phases, especially when interfaced with other material systems. To envision such heterostructures, high quality epitaxial films are needed. Here, we discuss the synthesis of SrIrO₃ films using metalorganic molecular beam epitaxy (MOMBE). X-ray diffraction and photoelectron spectroscopy were performed to characterize electronic valence and scanning transmission electron microscopy verified structural quality. We discuss how strain affects the electronic transport behavior in these films, including variations in metallicity as a function of in-plane compressive strain. THz spectroscopy measurements were performed to understand carrier dynamics in films grown on GdScO₃.