Improving measurement techniques and infrastructure for the milli-kelvin characterization of quantum dot devices

Electron spin qubits hosted in quantum dots are a promising platform for quantum computing as they are dense, coherent, and can be integrated with advanced semiconductor manufacturing. A key challenge is achieving sufficient uniformity in these devices to scale to larger arrays as the properties of quantum dots can be influenced by many aspects of the solid-state environment such as disorder or the atomistic details of interfaces. Important to this task is to find fast and reliable methods to measure and build statistics across many quantum dots and devices, allowing the comparison of different integration processes and materials different integration processes and materials. Here we detail the measurement infrastructure and techniques used to measure disorder and extract valley and orbital splittings, charge noise, exchange tunability, and coherence over multiple devices and wafers fabricated at Intel [1]. 

[1]  S. Neyens, O. Zietz et al.  “Probing single electrons across 300 mm spin qubit wafers”.