Thursday, March 7, 2024
8:00AM - 8:36AM
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S21.00001: Orbitronics: Electron orbital angular momentum dynamics in solids
Invited Speaker:
Hyun-Woo Lee
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Thursday, March 7, 2024
8:36AM - 8:48AM
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S21.00002: Magneto-Optical Detection of the Orbital Hall Effect in Chromium
Igor Lyalin, Roland K Kawakami, Peter M Oppeneer, Sanaz Alikhah, Marco Berritta
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Thursday, March 7, 2024
8:48AM - 9:00AM
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S21.00003: First-Principles Calculation of the Optical Response of Current-Driven Orbital Magnetization
Farzad Mahfouzi, Paul Haney
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Thursday, March 7, 2024
9:00AM - 9:12AM
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S21.00004: Impact microstructure of bottom ferromagnetic layer to spin orbit torque efficiency in FM/NM/FM tri-layer system
Yu-Han Huang, Yu-Lon Lin, Yu-Hui Wu, Chi-Wei Cheng, Yu-Chia Chen, Qi Jia, Yifei Yang, Jian-Ping Wang, Yuan-Chieh Tseng
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Thursday, March 7, 2024
9:12AM - 9:24AM
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S21.00005: Exchange-driven spin Hall effect in anisotropic ferromagnets
Kirill D Belashchenko
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Thursday, March 7, 2024
9:24AM - 9:36AM
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S21.00006: Unconventional spin-orbit torques in IrO2 based devices
Michael V Patton, Tianxiang Nan, Evgeny Y Tsymbal, Mark S Rzchowski, Chang-Beom Eom
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Thursday, March 7, 2024
9:36AM - 10:12AM
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S21.00007: Chirality and spin selectivity in Te and other crystals
Invited Speaker:
Jagoda L Slawinska
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Thursday, March 7, 2024
10:12AM - 10:24AM
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S21.00008: Exotic Spin-Orbit Torques in Chiral Tellurium
Shuchen Li, Chang Niu, Axel Hoffmann, Peide (Peter) Ye, Ruihao Liu
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Thursday, March 7, 2024
10:24AM - 10:36AM
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S21.00009: Spin-orbit torque and inverse spin-orbit torque effects in monolayer Fe3GeTe2
Fei Xue, Mark D Stiles, Paul Haney
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Thursday, March 7, 2024
10:36AM - 10:48AM
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S21.00010: Spin-polarized transport through the Kondo-lattice 2-D vdW ferromagnets FenGeTe2
DEEPTI RANA, Monika Bhakar, Soumyaranjan Dash, Aswini R, Basavaraja G, Chandan Patra, Satyabrata Bera, Sandeep Howlader, Neeraj Saini, Suman K Pradhan, Rajeswari R Chowdhury, Mintu Mondal, Ravi P Singh, Mukul Kabir, Sanjeev Kumar, Goutam Sheet
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Thursday, March 7, 2024
10:48AM - 11:00AM
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S21.00011: Spin transfer torque in F/F devices with non-identical half-metallic layers
Volodymyr Shablenko, Yaroslaw Bazaliy
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