Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session S20: Advanced Characterization and Theory
8:00 AM–10:36 AM,
Thursday, March 7, 2024
Room: M101ABC
Sponsoring
Unit:
DCMP
Chair: Zac Ward
Abstract: S20.00008 : Study of initial growth and band diagram of e-beam evaporated Al2O3/ MBE Al/sapphire using in-situ x-ray photoelectron spectroscopy*
9:24 AM–9:36 AM
Presenter:
Wan-Sin Chen
(National Taiwan University)
Authors:
Wan-Sin Chen
(National Taiwan University)
Yi-Ting Cheng
(National Tsing Hua University)
Yen-Hsun Glen Lin
(National Tsing Hua University)
Chiu-Ping Cheng
(National Chiayi University)
Jueinai Kwo
(National Tsing Hua University)
Minghwei Hong
(National Taiwan University)
A large band bending and the atomic form of Al were observed at the initial MBE-Al film growth. The band bending remained the same when the Al film was thicker than 2 nm, and became metallic. When Al2O3 was evaporated onto Al films, we observed a surface photovoltage (SPV) effect at a very thin thickness of Al2O3. As thickness of Al2O3 increased, we observed a downward band bending within the Al2O3 layer, shifting toward higher binding energy.
1 K. Y. Lin et al, J. Crystal Growth 512, 223 (2019).
*We thank the support from Natl. Sci. and Technol. Council, Taiwan through grant number NSTC 112-2119-M-007-009.
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