Landauer-Buettiker approach for the spin Hall angle in monolayer-Xenes*

We propose a model to calculate the spin Hall angle for the elemental monolayers of group IV-Xenes. This model is based on Landauer-Buttiker formalism for quantum transport [1], in the presence of manual defects, manual dislocations, and interface-induced spin-orbit coupling. The spin-Hall angle of these devices also illustrates the mesoscopic fluctuations, which can be a comparative measure for graphene and other metallic devices. To validate our outcomes, we compare our results with experimental data and numerically extract real-space simulation results based on the nearest-neighbor tight binding model. This work will serve to be a template to calculate spin-Hall conductivity for all the elemental monolayers [2], considering the intrinsic scattering mechanism. This work can be further extended to other material combinations [3] also. 

References:

[1] da Silva, Juliana M., et al. "Spin Hall angle in single-layer graphene." Journal of Applied Physics 132.18 (2022).

[2] Farzaneh et al. Spin splitting and spin Hall conductivity in buckled monolayers of group 14: First-principles calculations. Physical Review B, 104(11), 115205.

[3] Safeer, C. K., et al. "Room-temperature spin Hall effect in graphene/MoS2 van der Waals heterostructures." Nano letters 19.2 (2019): 1074-1082.