Artificial chiral superlattice for studying chiral induced spin selectivity effect

The discovery of chiral-induced spin selectivity (CISS) offers a breakthrough in the ability to control spin orientation without the need for external magnetic fields, opening up exciting possibilities for innovative spintronic device designs. While numerous methods have been explored to introduce CISS into solid-state materials and devices, previous systems have often suffered from issues such as high inhomogeneity, low spin selectivity, limited stability, and challenges in creating robust spintronic devices. In this study, we introduce a novel class of chiral molecular intercalation superlattices (CMIS) as a stable and reliable platform for investigating CISS in solid-state materials. These CMIS structures were developed by intercalating chiral molecules into two-dimensional atomic layers. My utilizing these CMIS structures as spin-filtering layers, we achieved spin tunneling junctions with a  tunnelling magnetoresistance ratio exceeding 300% and a spin polarization ratio exceeding 60%. With a wide range of 2DACs, each with tunable electronic properties, and an extensive selection of chiral molecules that can be designed with specific structural motifs, the CMIS represent a diverse family of artificial chiral materials suited for investigating the CISS phenomenon and harnessing its potential for next-generation spintronic devices.