Bulletin of the American Physical Society
2024 APS March Meeting
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session OD01: V: On-Demand Presentations - Available throughout March Meeting
6:00 AM,
Sunday, March 3, 2024
Abstract: OD01.00076 : Observation of single-element ferroelectricity in a two-dimensional bismuth layer
Presenter:
Jian Gou
(Zhejiang University)
Authors:
Jian Gou
(Zhejiang University)
Hua Bai
(Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming)
Xuanlin Zhang
(Zhejiang Province Key Laboratory of Quantum Technology and Device,School of Physics,Zhejiang University)
Yu Li Huang
(Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University)
Sisheng Duan
(National University of Singapore)
Ariando Ariando
(Natl Univ of Singapore)
Shengyuan A Yang
(Research Laboratory for Quantum Materials, Singapore University of Technology and Design)
Lan Chen
(Institute of Physics, Chinese Academy of Sciences)
Yunhao Lu
(Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University)
Andrew T Wee
(Natl Univ of Singapore)
In this work, we employed the scanning tunnelling microscopy (STM) and non-contact atomic force microscopy (nc-AFM) to investigate the black-phosphorus-like Bi (BP-Bi) monolayer. Different from the centrosymmetric black phosphorus, the BP-Bi monolayer exhibits a buckled atomic arrangement between its two sublattice due to weak and anisotropic sp orbital hybridization, thus supporting the noncentrosymmetry in BP-Bi. Our electronic state measurements and kelvin probe force microscopy (KPFM) also reveal electron redistribution between the two sublattices, suggesting an in-plane polarization. Most importantly, by applying an in-plane electric field using STM, we successfully demonstrate the polarization switching at both microscopic and macroscopic scales. This experimental discovery unveils the emergent single-element ferroelectricity, which has the potential to expand our understanding of ferroelectric mechanism and facilitate the development of ferroelectric devices in the future.
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