Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session N12: Thermodynamic and Transport Properties
11:30 AM–2:18 PM,
Wednesday, March 6, 2024
Room: M100C
Sponsoring
Unit:
FIAP
Chair: Mathias Steiner, IBM Research
Abstract: N12.00004 : Dual Operation Modes of the Ge Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
12:06 PM–12:18 PM
Presenter:
David Lidsky
(Sandia National Laboratories)
Authors:
David Lidsky
(Sandia National Laboratories)
Christopher R Allemang
(Sandia National Laboratories)
Troy A Hutchins-Delgado
(Sandia National Laboratories)
Anthony R James
(Sandia National Laboratories)
Portia J Allen
(Colorado School of Mines)
Maziar Saleh Ziabari
(Sandia National Laboratories)
Peter A Sharma
(Sandia National Laboratories)
Tzu-Ming Lu
(Sandia National Laboratories)
Here, a germanium p-channel metal oxide semiconductor field effect transistor (MOSFET), with germanium-metal Schottky contacts, is experimentally demonstrated at a temperature of 4 Kelvin towards the goal of a monolithically integrated amplifier. The p-channel MOSFET turns on at a gate voltage of ‑1.6 V and shows a peak mobility of 500 cm2/Vs at carrier density 3 x 1012 cm‑2. At high drain-source bias voltages, the device operates in a non-conventional mode where the current is limited by the source contact and is gate controllable. In this mode, the transconductance is greater than the theoretical value for a conventional MOSFET with the same geometry, mobility, and capacitance. The fabrication process has a low thermal budget and requires neither doping nor ion implantation, making it suitable for monolithic integration.
This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. The views expressed here do not necessarily represent the views of the DOE or the U.S. Government.
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