Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session M13: Materials Synthesis and Processing
8:00 AM–11:00 AM,
Wednesday, March 6, 2024
Room: M100D
Sponsoring
Unit:
FIAP
Chair: Chiou Yang Tan, University of Minnesota
Abstract: M13.00009 : Controlled Spalling of 4H Silicon Carbide Films for Power Electronics and Quantum Information Science*
9:36 AM–9:48 AM
Presenter:
Connor Horn
(University of Chicago)
Authors:
Connor Horn
(University of Chicago)
Antoni Wellisz
(University of Chicago)
Christina Wicker
(University of Chicago)
Cyrus Zeledon
(University of Chicago)
Pavani Vamsi Krishna Nittala
(University of Chicago)
F. Joseph Heremans
(Argonne National Laboratory)
David D Awschalom
(University of Chicago)
Supratik Guha
(University of Chicago)
1. Substrate Reuse: This technique allows the detachment of SiC layers from bulk substrates, such that the bulk substrates have been repolished and re-spalled, which can be valuable for cost-efficient commercial applications.
2. Heterogeneous Integration: Spalled SiC films are effectively integrated with other materials or devices, via polymer adhesives or metal bonding.
Notably, SiC is the highest fracture toughness material which has been spalled, approximately a factor of 3 times tougher than gallium nitride [1]. Because high fracture toughness refractory materials are not compatible with most layer transfer techniques, this is an exciting development which can evoke spalling of other ultra-hard crystals.
[1] S. W. Bedell et al., J. Appl. Phys., vol. 122, no. 2, p. 025103, Jul. 2017.
*S.G. acknowledges support from the Vannevar Bush Fellowship under the program sponsored by the Office of the Undersecretary of Defense for Research and Engineering and in part by the Office of Naval Research as the Executive Manager for the grant.
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