Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session M03: Defects and Doping in Si, Ge, SiC, and Diamond
8:00 AM–11:00 AM,
Wednesday, March 6, 2024
Room: L100C
Sponsoring
Units:
DMP DCOMP FIAP
Chair: Wennie Wang, University of Texas at Austin
Abstract: M03.00008 : Quantifying Phosphorous Levels in Ultrathin Si Films using Second Harmonic Generation*
9:48 AM–10:00 AM
Presenter:
Ting Yu Yen
(Physics, National Cheng Kung University)
Authors:
Ting Yu Yen
(Physics, National Cheng Kung University)
Yu-Hsiang Huang
(Physics, National Cheng Kung University)
Meng-Ting Shih
(Physics, National Cheng Kung University)
Wei-Ting Chen
(Physics, National Cheng Kung University)
Tzu-En Huang
(Physics, National Cheng Kung University)
Hua-Hsing Liu
(Physics, National Cheng Kung University)
Kung-Ming Hung
(National Kaohsiung University of Science and Technology)
Kuang-Yao Lo
(Physics, National Cheng Kung University)
Collaboration:
This work was supported by the National Science and Technology Council, Taiwan, under contract No. NSTC 112-2112-M-006-033 -
The non-monotonic variation of the second-order susceptibility χ(2) with dopant concentration may be attributed to the presence of interstitial defects and dopant agglomeration in highly doped silicon. The trapping rate at t = 0, denoted as R(0), exhibits a nonlinear dependency on dopant concentration due to the combined effects of ionization energy reduction, bandgap narrowing, and tunneling effect. As the quantity of electron density generated and trapped at the interface or surface directly impacts R(0), a substantial correlation between R(0) and surface electron density (nsur) is evident.
*Thanks the Ministry of Science and Technology of the Republic of China, Taiwan, for financially supporting this research under Contract No. MOST 111-2112-M-006-035
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