Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session K05: Defects and Doping in Oxide Semiconductors
3:00 PM–5:48 PM,
Tuesday, March 5, 2024
Room: L100E
Sponsoring
Units:
DMP DCOMP FIAP
Chair: Filip Tuomisto, University of Helsinki
Abstract: K05.00014 : Cryogenic radiation-hard fully-depleted silicon-on-insulator field-effect transistors*
5:36 PM–5:48 PM
Presenter:
Heorhii Bohuslavskyi
(VTT Technical Research Centre of Finland)
Authors:
Heorhii Bohuslavskyi
(VTT Technical Research Centre of Finland)
Kerttuli Helariutta
(University of Helsinki)
Kirsi Tappura
(VTT Technical Research Centre of Finland)
Eija Tuominen
(VTT Technical Research Centre of Finland)
In this work, we irradiated our custom FD-SOI FETs [3] with 7.5 MeV protons for the total irradiation dose of 30 Mrad(Si), at the radiation-hard technology threshold [1]. Studying transfer/output characteristics and low-frequency current noise of irradiated FETs with different dimensions, we observed that introduced defects and impact of irradiation, which degrades FET's electrostatics, e.g. in terms of subthreshold swing and VTH, can be effectively mitigated through reverse BB (pushing the channel toward the top Si/SiO2 interface) from 293 K down to 4 K.
In summary, we demonstrate that our FD-SOI technology is a promising candidate for room temperature and cryogenic radiation-hard applications.
[1] IEEE Trans Nucl Sci, vol. 34, no.6, pp.1621-1628 (1987).
[2] IEEE Int. SOI Conf., Tempe, AZ, USA, pp.1-2 (2011).
[3] arXiv:2208.12131 (2022).
*We acknowledge support from EU Horizon 2020 project No.101113983, the Academy of Finland project No.350325, & Business Finland project No.128291.
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