Electron Tunneling in Double Quantum Dot-Quantum Well Complex: Quantum Sensor Simulation*

The electron localization of confinement states in double quantum dots (DQDs) is described by the two-level system theory [1]. The spectral distribution of electron localization in DQDs depends on the medium, external fields, geometry, and material mixing and can be used in a quantum sensor. We propose a sensor that combines double quantum dots with molecules of an analyte. By detecting the spectral distribution of electron tunneling in DQDs, we can identify the analyte spectrum and determine the composition of the analyte by comparing it to a reference sample. To investigate electron tunneling in such a complex system, we conducted three-dimensional (3D) computational modeling using the effective potential approach for InAs/GaAs heterostructures. The analyte spectrum was simulated by employing a quantum well with a quasi-discrete spectrum. The calculations demonstrate the significant potential of using this complex as a sensor.