centers in c-plane silicon carbide

Optically active solid-state defects have enabled the pursuit of a wide range of quantum technologies. The V_Si center in silicon carbide is a promising next-generation candidate, boasting excellent optical- and spin coherence within the technologically mature silicon carbide platform. I will present our progress on studying the optical coherence and spectral stability of V_Si centers in samples diced from a commercially available, 4-inch c-plane silicon carbide wafer. To enhance the limited collection efficiency, we fabricate light-guiding nanopillars and work towards integrating V_Si centers in nanophotonic 'alligator' cavities, which are especially well-suited for the c-plane defect orientation. Enhancement of the V_Si center's optical properties in commercially available wafers might open up new opportunities for its use in large-scale quantum technologies.