Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session F14: Electronic Structure of Topological Materials (Photoemission, etc.) I
8:00 AM–11:00 AM,
Tuesday, March 5, 2024
Room: M100E
Sponsoring
Unit:
DCMP
Chair: Madhab Neupane, University of Central Florida
Abstract: F14.00010 : Electronic structure of strain- and thickness- tuned epitaxial α-Sn1-xGex thin films as studied by ARPES and spin-ARPES
9:48 AM–10:00 AM
Presenter:
Aaron N Engel
(University of California, Santa Barbara)
Authors:
Aaron N Engel
(University of California, Santa Barbara)
Hadass S Inbar
(University of California, Santa Barbara)
Connor Dempsey
(University of California, Santa Barbara)
Paul Corbae
(UCSB)
Shinichi Nishihaya
(University of California, Santa Barbara)
Alexei V Fedorov
(Lawrence Berkeley National Laboratory)
Makoto Hashimoto
(SLAC - Natl Accelerator Lab)
Donghui Lu
(SLAC - Natl Accelerator Lab)
Christopher J Palmstrom
(University of California, Santa Barbara)
Using angle-resolved photoemission spectroscopy (ARPES), we first explore the electronic structure of ultrathin compressive strained α-Sn/InSb(001) grown by molecular beam epitaxy. We find evidence of the confinement-induced 3D TI phase in compressive strained α-Sn. With this behavior benchmarked, we then alloy the α-Sn films with Ge to decrease the bulk lattice constant and switch from compressive to tensile strained α-Sn1-xGex on InSb(001). The tensile strain induces a phase transition unexpectedly away from the 3D TI phase to a likely topologically trivial phase. We supplement these measurements with spin-ARPES and show the presence of multiple spin-polarized surface states in addition to the previously measured topological surface state. Our results pave the way for a better understanding of the effect of strain and confinement on α-Sn’s band structure.
[1] D. Zhang, et al., Phys. Rev. B 97, 195139 (2018).
[2] S. Küfner, et al., Phys. Rev. B 90, 125312 (2014).
[3] Y. Ohtsubo, et al., Phys. Rev. Lett 111, 216401 (2013).
[4] L. D. Anh, et al., Adv. Mater. 33, 2104645 (2021).
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