Second-order correlation measurements of electrically generated interlayer excitons in atomically thin semiconductor heterostructures

Two-dimensional type-II heterostructures, such as MoSe₂/WSe₂, provide an atomically thin platform for studying the interactions of strongly interacting excitons and free charges. By applying a forward bias, we electrically inject electrons and holes that recombine as interlayer excitons (IEs) and emit electroluminescence. We can further tune the relative electron-hole imbalance with electrostatic gates to study the formation of IEs interacting with an underlying Fermi sea. We combine electroluminescence experiments, photoluminescence spectroscopy, and second-order correlation measurements to study the nature of these strongly driven non-equilibrium states.