Title: Passivated Interfacial Traps of Monolayer Phototransistor [P1] with Bipolar Electrical Pulse*

   Heterogeneous integration of monolayer semiconductors is an emergent approach to induce unprecedented properties. A long-standing challenge along this route is to manipulate the interfacial configurations of each unit in stacking architecture.Monolayer of transition metal dichalcogenides (TMDs) offers an embodiment of studying interface engineering of integrated systems because optoelectronic performances generally trade off with each other due to interfacial trap states. [1-3]

   By utilizing a bipolar gate pulse, electrostatic passivation of interfacial traps is accomplished. These findings open pathways for the development of integrated devices of the stacked monolayers.

Ref 

[1] Chen, P.-H.; Chen, C.-A.; Lin, Y.-T.; Hsieh, P.-Y.; Chuang, M.-H.; Liu, X.; Hsieh, T.-Y.; Shen, C.-H.; Shieh, J.-M.; Wu, M.-C. Passivated Interfacial Traps of Monolayer MoS2 with Bipolar Electrical Pulse. ACS Applied Materials & Interfaces 2023, 15 (8), 10812-10819.

[2] Hu, Z.; Wu, Z.; Han, C.; He, J.; Ni, Z.; Chen, W. Two-Dimensional Transition Metal Dichalcogenides: Interface and Defect Engineering. Chem. Soc. Rev. 2018, 47, 3100−3128.

[3] Cao, G.; An, Y.; Bao, Q.; Li, X. Physics and Optoelectronic Simulation of Photodetectors Based on 2D Materials. Adv. Opt. Mater. 2019, 7, No. 1900410.