APS March Meeting 2024
Monday–Friday, March 4–8, 2024;
Minneapolis & Virtual
Session B13: Electrical Transport in High-Mobility Materials/Devices
11:30 AM–2:06 PM,
Monday, March 4, 2024
Room: M100D
Sponsoring
Unit:
FIAP
Chair: Maricris Mayes, University of Massachusetts Dartmouth
Abstract: B13.00013 : Comparative Analysis of Geometrical and Contact Modification Techniques of Perforated Source Electrode for Enhancing Vertical Organic Field-Effect Transistor Performance.*
1:54 PM–2:06 PM
Abstract
Presenter:
Sirsendu Ghosh
(Indian Institute of Technology Bombay)
Author:
Sirsendu Ghosh
(Indian Institute of Technology Bombay)
Collaboration:
Sirsendu Ghosh, Pramod Kumar.
Vertical organic field effect transistors (VOFETs) offer high working frequency, current density, and low power consumption compared with the lateral organic field effect transistors counterpart. The use of a short-channel length in VOFETs allows to operate at low voltages, which is advantageous for organic electronics as it can potentially reduce power consumption. Simulation studies are carried out using COMSOL Multiphysics software to better understand the charge transport behavior and the improvement of device performance in VOFETs considering N, N′-Dioctyl-3,4,9,10-perylenedlenedicarboximide (PTCDI-C8) as the n-type organic semiconductor (OSC). One of the main challenges in VOFETs is dealing with high OFF current, which can lead to power leakage and reduced performance. To address the high OFF current, we have explored geometrical modification in the source contact region of the VOFETs. In geometrical modification the two structures viz. non-floating and floating source contact are compared. Here floating source contact represents a contact which is not in direct contact with the gate dielectric. The simulation results show that the non-floating contact performed better than the floating contact in terms of ON/OFF ratio and subthreshold-swing (SS) due to higher gate field interaction. Additionally, the source contact is modified with an insulation layer on it to improve ON/OFF ratio and SS in both floating and non-floating contact. The coating of insulation on floating source contact has been done in three different ways. ‘Top-side’, ‘top side along with sidewall’, and ‘top side and bottom side’. In the first case, due to the insulation of the top side of the source contact, there is no direct charge flow from the source to the drain, which gives a lower OFF current. Now the top side along with the sidewall is insulated as the charge transfer from the sidewall is still there under the drain field to provide OFF current. The floating source contacts show improvement in VOFET performance by coating the ‘top and side edge’ with an insulator. The results suggest that reducing the thickness of the buried layer in a floating contact configuration with top and sidewall insulation leads to relatively better performance than all the source contact modifications.
*Indian Institute of Technology Bombay.