Bulletin of the American Physical Society
APS March Meeting 2024
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session B12: 2D Materials: Molybedenum Chalcogenides
11:30 AM–2:30 PM,
Monday, March 4, 2024
Room: M100C
Sponsoring
Unit:
FIAP
Chair: Robert Jacobberger, University of Wisconsin - Madison
Abstract: B12.00007 : Engineering Correlated States in MoSe2 by a Periodic Nanopatterned Gate*
12:42 PM–12:54 PM
Presenter:
Trevor Stanfill
(University of Arizona)
Authors:
Trevor Stanfill
(University of Arizona)
John R Schaibley
(University of Arizona)
Daniel N Shanks
(University of Arizona)
Takashi Taniguchi
(Kyoto Univ)
Kenji Watanabe
(National Institute for Materials Science)
Nan Huang
(University of Tennessee Knoxville)
David Mandrus
(University of Tennessee)
Brian J LeRoy
(University of Arizona)
Transition metal dichalcogenide semiconductors such as MoSe2 have low defect densities and enhanced Coulomb interactions that make them excellent platforms for studying many-body physics. In recent years, they have been shown to host strongly correlated states, such as Wigner crystals and Mott insulators. Many of these works, however, have been restricted to samples measured under an external magnetic field at extreme cryogenic temperatures. I will present an alternative approach based on integrating nano-scale patterned graphene gates into an MoSe2 semiconductor heterostructure. This allows us to spatially tune the semiconductor’s charge configuration, such that charge order can be maintained through a precise gating scheme. By studying correlated states through gate patterning, we can freely choose a pattern geometry and size such that we can engineer a customizable potential landscape into the semiconductor. Specifically, we patterned a 2D-periodic triangular lattice with nearest-neighbor distances of 40 nm, and individual hole diameters of 12 nm. We investigated the resulting states hosted by the semiconductor through gate-dependent photoluminescence and white light reflectivity. Our results show changes to the emission and reflectivity of our sample, when exciting over the nanopatterned gate.
Funding: We acknowledge support from NSF Grant Nos. ECCS-2054572, DMR-2003583, and AFOSR Grant Nos. FA9550-20-1-0217, FA9550-22-1-0312, FA9550-22-1-0113.
*We acknowledge support from NSF Grant Nos. ECCS-2054572, DMR-2003583, and AFOSR Grant Nos. FA9550-20-1-0217, FA9550-22-1-0312, FA9550-22-1-0113.
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