Bulletin of the American Physical Society
2024 APS March Meeting
Monday–Friday, March 4–8, 2024; Minneapolis & Virtual
Session AA06: V: General Physics I
5:30 AM–7:30 AM,
Monday, March 4, 2024
Room: Virtual Room 06
Sponsoring
Unit:
APS/SPS
Chair: Apurba Paul, University of Notre Dame; Jonte Hance, Newcastle University
Abstract: AA06.00009 : Oral:Role of Oxygen vacancies in resistive switching in ZnO*
7:06 AM–7:18 AM
Presenter:
Satyasiban Dash
(Department of Physics,Indian Institute of Technology, Madras)
Authors:
Satyasiban Dash
(Department of Physics,Indian Institute of Technology, Madras)
Prahallad Padhan
(Department of Physics ,Indian Institute of Technology,Madras)
The resistance of the metal oxides under external bias has been observed to show brain-like synapses with suitable metal-metal oxide-metal configuration.It is paving the way for Resistive-Random Access Memories with faster switching time and low power consumption. Under low resistance state point defects like Oxygen vacancies segregate to form a conductive filament and when it gets ruptured a high resistive state is achieved. The physical nature and electrical properties of conductive filament formation have been studied using transport measurement, TEM and AFM. However, the nature of electron distribution and relative contribution from atomic orbitals remain tricky. In this regard, we have explored the resistive switching phenomena of ZnO by creating and removing a series of vacancies along [010] direction using density functional theory. Oxygen vacancies can exist in three different states Vo0,Vo+1 and Vo+2. The Vo0 found to be stable at higher energy than Vo+2.For the Vo0state, the Zn nearest neighbours are displaced inward by 12 % of the equilibrium Zn–O bond length and for the Vo+1 and Vo+2 states, the displacements are outward by 2 % and 23 %, respectively.Electron localisation and band decomposed charge density calculations have confirmed the observation of conductive filament. A better insight into the nature of resistive switching will help in the development of ReRAMs and neuromorphic electronic devices.
*We acknoledge HPCE, IIT Madras for the computing resources.
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