Magnetic Anisotropy Modulation in Bismuth Substituted Yttrium Iron Garnet with Voltage Controlled Strain*

Voltage control of spintronic devices can lead to extremely energy efficient computing in intelligent edge devices and future IoTs [1,2]. In our previous study we reported voltage induced strain mediated modulation of perpendicular magnetic anisotropy (PMA) in Yttrium substituted dysprosium Iron garnet (Y: DyIG) [3]. In this study, we perform magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi: YIG) with voltage induced strain. A 55 nm thick Bi:YIG film is grown on piezoelectric PMN-PT/SiO2 (5 nm) where the SiO2 layer is used to prevent the heterostructure templating from perovskite. Further the ratio of Bi:Y is optimized for low coercivity. The piezoelectric is poled along [011] direction by applying voltages across the thickness of PMN-PT/SiO2/Bi-YIG heterostructure. Changes in magnetic anisotropy in poled heterostructure for different amplitude voltages will be studied in-situ with magneto-optical Kerr microscopy (MOKE).

 [1]. M.A. Azam, C.A. Ross, J. Atulasimha et.al. Nanotechnology, 31, 145201 (2020)

 [2]. W. A. Misba, J. Atulasimha et. al. IEEE TED, 69, 1658 (2021)

 [3] M. J. Gross, W.A. Misba, K. Hayashi, D.B. Gopman, C.A. Ross, J. Atulasimha et. al.  (2022) (under review)