Energy dissipation in macroscopic quantum tunnel junctions

We study energy dissipation, in large quantum tunnel junctions, by applying voltages just below barrier height up to break down voltages. Moreover, by lowering the temperature and adjusting the applied voltage to the junction, the effect on dissipation caused by the variation in barrier height relative to the energy of the incident particle is empirically examined. Here, we propose a model that considers the energy dissipated during quantum tunneling processes in solid state junctions.

The results indicate two effects. Firstly, as the barrier height decreases with increasing temperature the fraction of energy dissipated also decreases. Furthermore, it is found that for lower barrier heights junctions, a drop in the junction resistance around breakdown voltage correlates with large tunneling currents across the junction. This can be explained as lower barrier heigh junctions dissipate less energy and thus, able to sustain larger currents before reaching break down voltages.