Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session UU01: V: General Physics I
5:00 AM–7:00 AM,
Wednesday, March 22, 2023
Room: Virtual Room 1
Sponsoring
Unit:
APS
Chair: Xin Shi, University of Houston
Abstract: UU01.00007 : Impact of Poly-Si channel: Multiscale modeling insight from first-principles to device simulation
6:12 AM–6:24 AM
Presenter:
Rita Maji
(University of Modena and Reggio Emilia)
Authors:
Rita Maji
(University of Modena and Reggio Emilia)
Tommaso Rollo
(Applied Materials Inc)
Shruba Gangopadhyay
(Applied Materials INC)
Milan Pesic
(Applied Materials Inc.)
Luca Larcher
(Applied Materials Inc.)
Eleonora Luppi
(LCT, Sorbonne University)
Elena Degoli
(DISMI, University of Modena and Reggio Emilia)
Collaborations:
Rita Maji, Shruba Gangopadhyay, Milan Pešic, Tommaso Rollo, Eleonora Luppi, Elena Degoli, Luca Larcher
In the age of big data and the tremendous pace of data generation, there is a strong demand for ultra-high density storage devices. One of the frontrunners in the current workhorse is NAND flash memory devices. 3D integration and stackability is the key to the increase in storage density which enabled the wearable revolution. Despite becoming the mainstream and being inside every PC and mobile phone their operation and future are impacted by the constraints of a poly-Si channel. Poly-Si materials are characterized by the presence of several defects like voids, grain boundaries (GBs), etc. GBs can exert a detrimental influence on electrical performance and its variability. However, the electrical activity of GBs strongly depends on the orientation of grains (barrier impacting electron scattering). In this work, the impact of GBs on the poly-Si channel is investigated in a charge-trap 3D NAND flash memory. Statistical distributions of
ON current, threshold voltage, and sub-threshold slope are extracted with random grain distributions using the Ginestra® modeling platform, where fundamental properties of GBs, with and without different impurities are taken from density functional theory (DFT). The results provide insights to examine the factors affecting the electrical activity of GBs and their impact on electron scattering. Knowledge of optimal parameters from DFT and its use on modeling devices could be an effective way to mitigate the sensing instability and improve the device's performance.
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700