The Landé g-factor of electrons in 2D-PEPI studied by transient photoinduced quantum beatings*

A new class of materials known as hybrid organic-inorganic perovskites (HOIP) has drawn interest for its optoelectronic properties and potential for use in new devices such as solar cells. (C₆H₅C₂H₄NH₃)₂[PbI₄] (or PEPI) is a 2D-HOIP that has shown a variety of exotic optoelectronic properties, such as Rashba splitting. We have studied the Landé g-factor of electrons in pristine and doped PEPI films by the technique of photoinduced transient quantum beatings in the ps time domain.  The PEPI films were prepared and doped in a Benzyl Viologen solution for differing lengths of time to control the degree of doping.  Electronic doping was verified by doping-induced absorption spectroscopy in the mid-IR spectral range. We observed an oscillatory time-resolved response of which frequency changed with the applied magnetic field in the Voight configuration, from which the g-value could be determined.  We found that the electron g-factor for the undoped PEPI is higher than that of highly doped PEPI films.