Photon bunching of interlayer exciton electroluminescence in atomically thin semiconductor heterostructures*

Atomically thin semiconductor heterostructures are an ideal system for exploring strong light-matter interactions in the 2D limit. When electrons and holes are individually injected into these materials, they can bind to form interlayer excitons that emit light when they recombine. In this work, we study the electroluminescence of interlayer excitons in MoSe₂/WSe₂-based heterostructures under a forward bias. In particular, we performed measurements of the second order correlation function and observed photon bunching for a range of bias voltages. We discuss the origin of this bunched electroluminescence and what it elucidates about the quantum state of the interlayer excitons.