Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session Q34: Semiconductor Materials for Beyond CMOS Electronics
3:00 PM–5:36 PM,
Wednesday, March 8, 2023
Room: Room 226/227
Sponsoring
Unit:
FIAP
Chair: Yong Zhong, Stanford University
Abstract: Q34.00004 : Contact-Induced Oxygen Scavenging in Indium Tin Oxide Transistors*
3:36 PM–3:48 PM
Presenter:
Sumaiya Wahid
(Stanford University)
Authors:
Sumaiya Wahid
(Stanford University)
Mahnaz Islam
(Stanford University)
Christopher Perez
(Stanford University)
Timothy D Brown
(Sandia National Laboratories)
Michelle E Chen
(Stanford University)
Matthew A Marcus
(Lawrence Berkeley National Laboratory)
Hendrik Ohldag
(Lawrence Berkeley National Laboratory)
Suhas Kumar
(Sandia National Laboratories)
Eric Pop
(Stanford University)
Using x-ray absorption spectroscopy and metals with four different work functions (Ti/Pt, Ni, Pd, or Pt) enables us to uncover that oxygen scavenging from ITO occurs with a trend consistent with the reactivity of the metal contact. Such oxygen scavenging (by the contacts) from the ITO channel in a transistor creates more oxygen vacancies, i.e. higher carrier concentration, which can shift the threshold voltage negative, especially at short channel lengths where the contacts are closer together. The observed trend with metal reactivity is consistent with our previous reports of ITO transistors with Ni vs. Pd contacts, where Ni contacts showed a more negative threshold voltage shift at shorter channel lengths compared to Pd contacts.
In summary, using x-ray characterization, our results provide new understanding of device operation and threshold voltage (in)stability of ITO transistors, which is essential for optimizing transistor performance and reliability.
*This work is partly supported by Stanford Graduate Fellowship and SystemX Alliance.
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