Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session Q34: Semiconductor Materials for Beyond CMOS Electronics
3:00 PM–5:36 PM,
Wednesday, March 8, 2023
Room: Room 226/227
Sponsoring
Unit:
FIAP
Chair: Yong Zhong, Stanford University
Abstract: Q34.00012 : Quasi Van der Waals Epitaxiay of Magnetic Topological Insulator on GaAs (111) Substrate
5:12 PM–5:24 PM
Presenter:
Yuxing Ren
(University of California, Los Angeles)
Authors:
Yuxing Ren
(University of California, Los Angeles)
Lixuan Tai
(University of California, Los Angeles)
Hung-Yu Yang
(University of California, Los Angeles)
Xiang Dong
(University of California, Los Angeles)
Ting-Hsun Yang
(University of California, Los Angeles)
Yaochen Li
(University of California, Los Angeles)
Kang Wang
(University of California, Los Angeles)
(111) substrate through modulation doping by MBE (Molecular Beam Epitaxy). The doping level and the thickness of each layer is examined to tune the bandgap and the Fermi level of the whole sample. In this way, we can tune the Fermi level into the bandgap and optimize the total resistivity to achieve quantization.
Considering the van der Waals nature of the epitaxial layers, it has very weak van der Waals bonding with the substrate. This gives rise to a quasi Van der Waals epitaxial growth mode at the interface of GaAs (111) and upper epitaxial layers, where strain relaxes quickly within the 1st epitaxial layer. Growth mechanism and the influence on its transport properties are also discussed.
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