Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session N32: Novel Semiconductors Thin Film Growth and Characterization
11:30 AM–2:30 PM,
Wednesday, March 8, 2023
Room: Room 224
Sponsoring
Unit:
DCMP
Chair: Mariana Fazio, University of Strathclyde
Abstract: N32.00006 : Nb and Re substitutional doping in MoSe2 monolayer: shallow dopants, defect creation and heterointerfaces*
12:30 PM–12:42 PM
Presenter:
Junqiu Zhang
(the University of Hong Kong)
Authors:
Junqiu Zhang
(the University of Hong Kong)
Yipu XIA
(The University of Hong Kong)
Zhoubin Yu
(Zhejiang University)
Mengfei Yuan
(the University of Hong Kong)
Xingyu Yue
(the University of Hong Kong)
Yuanjun Jin
(the University of Hong Kong)
Yue Feng
(SUSTC)
Bin Li
(SUSTC)
Bo Wang
(Zhejiang University)
Wingkin Ho
(the University of Hong Kong)
Chang Liu
(SUSTC)
Hu Xu
(SUSTC)
Chuanhong Jin
(Zhejiang University)
Maohai Xie
(the University of Hong Kong)
Here, we report substitutional doping of Nb and Re in MoSe2 monolayer during molecular beam epitaxy (MBE) and the structural properties of heterointerfaces of MoSe2-NbSe2 and MoSe2-ReSe2. Scanning tunneling microscopy and spectroscopy (STM/S) measurements reveal Nb and Re are both shallow energy level dopants, and the Fermi level of the sample can be effectively tuned by controlling doping concentrations. The as-grown n-type pristine MoSe2 deposited on graphene can be doped into p-type by Nb, whereas it becomes more heavily electron-doped by Re. Besides substituting Mo, Nb and Re dopants would introduce mirror twin boundaries (MTBs) of varying character in MoSe2. At the heterointerfaces between MoSe2 and Nb(Re)Se2, dense MTBs are always found when MoSe2 is grown after NbSe2. Sharp interfaces are obtained when MoSe2 growth proceeds NbSe2 deposition. At the interfaces between ReSe2 and MoSe2, mixing of atoms is observed.
*This work is financially supported by grants from the Research Grant Council of Hong Kong Special Administrative Region, China (Nos. C7036/17W, AoE/P-701/20, and N_HKU732).
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