Bulletin of the American Physical Society
2023 APS March Meeting
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session N22: Superconductivity:Majoranas
11:30 AM–2:30 PM,
Wednesday, March 8, 2023
Room: Room 214
Sponsoring
Unit:
DCMP
Chair: Dmitry Chichinadze, National High Magnetic Field Laboratory
Abstract: N22.00006 : In-situ shadow-wall deposited tin junctions on selective area grown buffered InAs nanowires
12:30 PM–12:42 PM
Presenter:
Aranya Goswami
(University of California, Santa Barbara)
Authors:
Aranya Goswami
(University of California, Santa Barbara)
Sanchayeta Mudi
(University of Pittsburgh)
Connor P Dempsey
(University of California, Santa Barbara)
Po Zhang
(University of Pittsburgh)
Hao Wu
(University of Pittsburgh)
Sergey M Frolov
(University of Pittsburgh)
Christopher J Palmstrom
(University of California, Santa Barbara)
In this talk, we demonstrate a completely customizable platform to grow in-plane indium arsenide (InAs) nanowires and subsequently deposit superconductors at predefined positions on the nanowire, without breaking vacuum. The nanowires were grown using chemical beam epitaxy with a selective-area growth (SAG) technique. High aspect ratio dielectric structures that were prefabricated next to the nanowires were used to subsequently shadow-deposit tin (the superconducting shell) at the preferred locations on the nanowire. This enabled the fabrication of high-quality superconductor-semiconductor-superconductor (SNS) junctions with minimal post-processing steps. Transport measurements from the gated SNS devices at millikelvin temperatures demonstrate gate-tunable supercurrent and a clean superconducting gap with a high critical field. This establishes that the in-vacuo method of shadow-depositing superconductors on SAG nanowires as a technique for scalable fabrication of complex hybrid nanostructures, with clean superconductor-semiconductor interfaces.
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