Bulletin of the American Physical Society
APS March Meeting 2023
Volume 68, Number 3
Las Vegas, Nevada (March 5-10)
Virtual (March 20-22); Time Zone: Pacific Time
Session M34: Photodetectors and Optical Emitters
8:00 AM–10:48 AM,
Wednesday, March 8, 2023
Room: Room 226/227
Sponsoring
Unit:
FIAP
Chair: Jay Mathews, University of Dayton
Abstract: M34.00006 : A model for the I-V characteristics of Ge and GeSn epitaxial pin diodes*
9:00 AM–9:12 AM
Presenter:
Jose Menendez
(Arizona State University)
Authors:
Jose Menendez
(Arizona State University)
Matthew A Mircovich
(Arizona State University)
John Kouvetakis
(Arizona State University)
The new model incorporates deep and shallow SRH recombination centers, as observed in DLTS studies. Tunneling-assisted-transitions associated with these defects account for the voltage dependence of the reverse bias current. The validity and universality of the approach is initially demonstrated by reproducing the I-V curves of epitaxial Ge-on-Si diodes in the literature. The model is also shown to be in good agreement with the measured I-V characteristics of Ge solar cells under illumination.
To test the applicability of the model to the GeSn system, GeSn pin diodes have been fabricated on Si using CVD techniques that combine stannanes and polygermanes with several precursors compatible with low temperature in situ doping. The compositional dependence of the material parameters is acconted for using experimental values or known extrapolation schemes. It is found that the I-V curves of GeSn diodes are reproduced with no loss of accuracy with respect to pure Ge diodes.
The model presented here represents a significant step toward the development of analytical tools for the rational optimization of GeSn technology.
*Supported by the National Science Foundation DMREF program under grant DMR-2119583
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